Measuring Device and Material ZT in a Thin-Film Si-Based Thermoelectric Microgenerator
AbstractThermoelectricity (TE) is proving to be a promising way to harvest energy for small applications and to produce a new range of thermal sensors. Recently, several thermoelectric generators (TEGs) based on nanomaterials have been developed, outperforming the efficiencies of many previous bulk generators. Here, we presented the thermoelectric characterization at different temperatures (from 50 to 350 K) of the Si thin-film based on Phosphorous (n) and Boron (p) doped thermocouples that conform to a planar micro TEG. The thermocouples were defined through selective doping by ion implantation, using boron and phosphorous, on a 100 nm thin Si film. The thermal conductivity, the Seebeck coefficient, and the electrical resistivity of each Si thermocouple was experimentally determined using the in-built heater/sensor probes and the resulting values were refined with the aid of finite element modeling (FEM). The results showed a thermoelectric figure of merit for the Si thin films of
Share & Cite This Article
Ferrando-Villalba, P.; Pérez-Marín, A.P.; Abad, L.; Dalkiranis, G.G.; Lopeandia, A.F.; Garcia, G.; Rodriguez-Viejo, J. Measuring Device and Material ZT in a Thin-Film Si-Based Thermoelectric Microgenerator. Nanomaterials 2019, 9, 653.
Ferrando-Villalba P, Pérez-Marín AP, Abad L, Dalkiranis GG, Lopeandia AF, Garcia G, Rodriguez-Viejo J. Measuring Device and Material ZT in a Thin-Film Si-Based Thermoelectric Microgenerator. Nanomaterials. 2019; 9(4):653.Chicago/Turabian Style
Ferrando-Villalba, Pablo; Pérez-Marín, Antonio P.; Abad, Llibertat; Dalkiranis, Gustavo G.; Lopeandia, Aitor F.; Garcia, Gemma; Rodriguez-Viejo, Javier. 2019. "Measuring Device and Material ZT in a Thin-Film Si-Based Thermoelectric Microgenerator." Nanomaterials 9, no. 4: 653.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.