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A Facile and Efficient Protocol for Preparing Residual-Free Single-Walled Carbon Nanotube Films for Stable Sensing Applications
Open AccessArticle

Low Temperature Synthesis of High-Density Carbon Nanotubes on Insulating Substrate

Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
College of Electronic Science and Technology, Shenzhen University, Shenzhen 518061, China
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(3), 473;
Received: 20 January 2019 / Revised: 23 February 2019 / Accepted: 15 March 2019 / Published: 21 March 2019
A method to synthesize high-density, vertically-aligned, multi-wall carbon nanotubes (MWCNTs) on an insulating substrate at low temperature using a complementary metal–oxide–semiconductor (CMOS) compatible process is presented. Two factors are identified to be important in the carbon nanotube (CNT) growth, which are the catalyst design and the substrate material. By using a Ni–Al–Ni multilayer catalyst film and a ZrO2 substrate, vertically-aligned CNTs can be synthesized at 340 °C using plasma-enhanced chemical vapor deposition (PECVD). Both the quality and density of the CNTs can be enhanced by increasing the synthesis temperature. The function of the aluminum interlayer in reducing the activation energy of the CNT formation is studied. The nanoparticle sintering and quick accumulation of amorphous carbon covering the catalyst can prematurely stop CNT synthesis. Both effects can be suppressed by using a substrate with a high surface energy such as ZrO2. View Full-Text
Keywords: CNT growth; low temperature; insulating substrate; CMOS compatible CNT growth; low temperature; insulating substrate; CMOS compatible
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MDPI and ACS Style

Xiao, Y.; Ahmed, Z.; Ma, Z.; Zhou, C.; Zhang, L.; Chan, M. Low Temperature Synthesis of High-Density Carbon Nanotubes on Insulating Substrate. Nanomaterials 2019, 9, 473.

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