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Nanomaterials 2019, 9(2), 289; https://doi.org/10.3390/nano9020289

Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

1
i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
2
Department of Materials and Earth Sciences, Technische Universität Darmstadt, Otto-Berndt-Straße 3, D-64287 Darmstadt, Germany
*
Author to whom correspondence should be addressed.
Received: 31 December 2018 / Revised: 12 February 2019 / Accepted: 14 February 2019 / Published: 19 February 2019
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Abstract

Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism. View Full-Text
Keywords: resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Deuermeier, J.; Kiazadeh, A.; Klein, A.; Martins, R.; Fortunato, E. Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device. Nanomaterials 2019, 9, 289.

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