Next Article in Journal
Performance of Toluene Removal in a Nonthermal Plasma Catalysis System over Flake-Like HZSM-5 Zeolite with Tunable Pore Size and Evaluation of Its Byproducts
Next Article in Special Issue
Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures
Previous Article in Journal
Electrochemical Characterization and Inhibiting Mechanism on Calcium Leaching of Graphene Oxide Reinforced Cement Composites
Previous Article in Special Issue
Recovery of Li(Ni0.33Mn0.33Co0.33)O2 from Lithium-Ion Battery Cathodes: Aspects of Degradation
Open AccessArticle

Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

1
i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
2
Department of Materials and Earth Sciences, Technische Universität Darmstadt, Otto-Berndt-Straße 3, D-64287 Darmstadt, Germany
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(2), 289; https://doi.org/10.3390/nano9020289
Received: 31 December 2018 / Revised: 12 February 2019 / Accepted: 14 February 2019 / Published: 19 February 2019
Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism. View Full-Text
Keywords: resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide
Show Figures

Graphical abstract

MDPI and ACS Style

Deuermeier, J.; Kiazadeh, A.; Klein, A.; Martins, R.; Fortunato, E. Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device. Nanomaterials 2019, 9, 289.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop