Next Article in Journal
The Role of Nanoanalytics in the Development of Organic-Inorganic Nanohybrids—Seeing Nanomaterials as They Are
Previous Article in Journal
Self-Propelled Janus Microdimer Swimmers under a Rotating Magnetic Field
Open AccessArticle

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

by Xuefei Liu 1,2,3, Zhaofu Zhang 4,*, Zijiang Luo 2,5, Bing Lv 3 and Zhao Ding 1,2,*
1
College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
2
Semiconductor Power Device Reliability Engineering Center of Ministry of Education, Guiyang 550025, China
3
Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China
4
Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK
5
College of Information, Guizhou Finance and Economics University, Guiyang 550025, China
*
Authors to whom correspondence should be addressed.
Nanomaterials 2019, 9(12), 1674; https://doi.org/10.3390/nano9121674
Received: 22 October 2019 / Revised: 17 November 2019 / Accepted: 20 November 2019 / Published: 23 November 2019
The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-VN) is energy favorable with the smallest sublayer distance and binding energy. Gr/g-AlN-VN is nonmagnetic, like that in the pristine Gr/g-AlN structure, but it is different from the situation of g-AlN-VN, where a magnetic moment of 1 μB is observed. The metallic graphene acts as an electron acceptor in the Gr/g-AlN-VN and donor in Gr/g-AlN and Gr/g-AlN-VAl contacts. Schottky barrier height Φ B , n by traditional (hybrid) functional of Gr/g-AlN, Gr/g-AlN-VAl, and Gr/g-AlN-VN are calculated as 2.35 (3.69), 2.77 (3.23), and 1.10 (0.98) eV, respectively, showing that vacancies can effectively modulate the Schottky barrier height. Additionally, the biaxial strain engineering is conducted to modulate the heterojunction contact properties. The pristine Gr/g-AlN, which is a p-type Schottky contact under strain-free condition, would transform to an n-type contact when 10% compressive strain is applied. Ohmic contact is formed under a larger tensile strain. Furthermore, 7.5% tensile strain would tune the Gr/g-AlN-VN from n-type to p-type contact. These plentiful tunable natures would provide valuable guidance in fabricating nanoelectronics devices based on Gr/g-AlN heterojunctions. View Full-Text
Keywords: graphene/g-AlN heterostructure; Schottky barrier height; interface vacancy; biaxial strain; first-principles calculation graphene/g-AlN heterostructure; Schottky barrier height; interface vacancy; biaxial strain; first-principles calculation
Show Figures

Figure 1

MDPI and ACS Style

Liu, X.; Zhang, Z.; Luo, Z.; Lv, B.; Ding, Z. Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering. Nanomaterials 2019, 9, 1674.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop