Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate
Abstract
1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Conflicts of Interest
References
- Kim, K.S.; Zhao, Y.; Jang, H.; Lee, S.Y.; Kim, J.M.; Kim, K.S.; Ahn, J.-H.; Kim, P.; Choi, J.-Y.; Hong, B.H. Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature 2009, 457, 706. [Google Scholar]
- Tao, L.; Cinquanta, E.; Chiappe, D.; Grazianetti, C.; Fanciulli, M.; Dubey, M.; Molle, A.; Akinwande, D. Silicene field-effect transistors operating at room temperature. Nat. Nanotechnol. 2015, 10, 227. [Google Scholar] [CrossRef] [PubMed]
- Liang, S.; Hasan, M.N.; Seo, J.-H. Direct Observation of Raman Spectra in Black Phosphorus under Uniaxial Strain Conditions. Nanomaterials 2019, 9, 566. [Google Scholar] [CrossRef] [PubMed]
- Ni, Z.; Liu, Q.; Tang, K.; Zheng, J.; Zhou, J.; Qin, R.; Gao, Z.; Yu, D.; Lu, J. Tunable bandgap in silicene and germanene. Nano Lett. 2011, 12, 113–118. [Google Scholar] [CrossRef] [PubMed]
- Peng, X.; Peng, L.; Wu, C.; Xie, Y. Two dimensional nanomaterials for flexible supercapacitors. Chem. Soc. Rev. 2014, 43, 3303–3323. [Google Scholar] [CrossRef]
- Liu, H.; Neal, A.T.; Zhu, Z.; Luo, Z.; Xu, X.; Tománek, D.; Ye, P.D. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano 2014, 8, 4033–4041. [Google Scholar] [CrossRef]
- Manzeli, S.; Ovchinnikov, D.; Pasquier, D.; Yazyev, O.V.; Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2017, 2, 17033. [Google Scholar]
- Liu, H.; Du, Y.; Deng, Y.; Peide, D.Y. Semiconducting black phosphorus: Synthesis, transport properties and electronic applications. Chem. Soc. Rev. 2015, 44, 2732–2743. [Google Scholar] [CrossRef]
- Wang, F.; Seo, J.-H.; Luo, G.; Starr, M.B.; Li, Z.; Geng, D.; Yin, X.; Wang, S.; Fraser, D.G.; Morgan, D.; et al. Nanometre-thick single-crystalline nanosheets grown at the water–air interface. Nat. Commun. 2016, 7, 10444. [Google Scholar] [CrossRef]
- Thi, Q.H.; Kim, H.; Zhao, J.; Ly, T.H. Coating two-dimensional MoS2 with polymer creates a corrosive non-uniform interface. NPJ 2D Mater. Appl. 2018, 2, 34. [Google Scholar] [CrossRef]
- Akinwande, D.; Brennan, C.J.; Bunch, J.S.; Egberts, P.; Felts, J.R.; Gao, H.; Huang, R.; Kim, J.-S.; Li, T.; Li, Y.; et al. A review on mechanics and mechanical properties of 2D materials—Graphene and beyond. Extreme Mechan. Lett. 2017, 13, 42–77. [Google Scholar] [CrossRef]
- Frank, I.; Tanenbaum, D.M.; van der Zande, A.M.; McEuen, P.L. Mechanical properties of suspended graphene sheets. J. Vac. Sci. Technol. B Microelectron. Nanometer Struct. 2007, 25, 2558–2561. [Google Scholar] [CrossRef]
- Scarpa, F.; Adhikari, S.; Phani, A.S. Effective elastic mechanical properties of single layer graphene sheets. Nanotechnology 2009, 20, 065709. [Google Scholar] [PubMed]
- Kim, J.; Baik, S.S.; Ryu, S.H.; Sohn, Y.; Park, S.; Park, B.-G.; Denlinger, J.; Yi, Y.; Choi, H.J.; Kim, K.S. Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus. Science 2015, 349, 723–726. [Google Scholar] [CrossRef] [PubMed]
- Castellanos-Gomez, A. Black Phosphorus: Narrow Gap, Wide Applications. J. Phys. Chem. Lett. 2015, 6, 4280–4291. [Google Scholar] [CrossRef]
- Gao, L. Flexible device applications of 2D semiconductors. Small 2017, 13, 1603994. [Google Scholar] [CrossRef]
- Akinwande, D.; Petrone, N.; Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 2014, 5, 5678. [Google Scholar] [CrossRef]
- Park, D.-W.; Schendel, A.A.; Mikael, S.; Brodnick, S.K.; Richner, T.J.; Ness, J.P.; Hayat, M.R.; Atry, F.; Frye, S.T.; Pashaie, R.; et al. Graphene-based carbon-layered electrode array technology for neural imaging and optogenetic applications. Nat. Commun. 2014, 5, 5258. [Google Scholar] [CrossRef]
- Cheng, R.; Jiang, S.; Chen, Y.; Liu, Y.; Weiss, N.; Cheng, H.-C.; Wu, H.; Huang, Y.; Duan, X. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 2014, 5, 5143. [Google Scholar]
- Wu, Y.; Zou, X.; Sun, M.; Cao, Z.; Wang, X.; Huo, S.; Zhou, J.; Yang, Y.; Yu, X.; Kong, Y.; et al. 200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors. ACS Appl. Mater. Interfaces 2016, 8, 25645–25649. [Google Scholar] [CrossRef]
- Yeh, C.-H.; Lain, Y.-W.; Chiu, Y.-C.; Liao, C.-H.; Moyano, D.R.; Hsu, S.S.H.; Chiu, P.-W. Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits. ACS Nano 2014, 8, 7663–7670. [Google Scholar] [CrossRef] [PubMed]
- Salvatore, G.A.; Münzenrieder, N.; Barraud, C.; Petti, L.; Zysset, C.; Büthe, L.; Ensslin, K.; Tröster, G. Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate. ACS Nano 2013, 7, 8809–8815. [Google Scholar] [CrossRef] [PubMed]
- Das, S.; Chen, H.-Y.; Penumatcha, A.V.; Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 2012, 13, 100–105. [Google Scholar] [CrossRef] [PubMed]
- Berciaud, S.; Ryu, S.; Brus, L.E.; Heinz, T.F. Probing the intrinsic properties of exfoliated graphene: Raman spectroscopy of free-standing monolayers. Nano Lett. 2008, 9, 346–352. [Google Scholar] [CrossRef] [PubMed]
- Xie, J.; Zhang, J.; Li, S.; Grote, F.; Zhang, X.; Zhang, H.; Wang, R.; Lei, Y.; Pan, B.; Xie, Y. Controllable disorder engineering in oxygen-incorporated MoS2 ultrathin nanosheets for efficient hydrogen evolution. J. Am. Chem. Soc. 2013, 135, 17881–17888. [Google Scholar] [CrossRef] [PubMed]
- Mannix, A.J.; Kiraly, B.; Hersam, M.C.; Guisinger, N.P. Synthesis and chemistry of elemental 2D materials. Nat. Rev. Chem. 2017, 1, 14. [Google Scholar] [CrossRef]
- Shi, Y.; Li, H.; Li, L.J. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques. Chem. Soc. Rev. 2015, 44, 2744–2756. [Google Scholar] [CrossRef]
- Zhan, Y.; Liu, Z.; Najmaei, S.; Ajayan, P.M.; Lou, J. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 2012, 8, 966–971. [Google Scholar] [CrossRef]
- Lin, Y.C.; Zhang, W.; Huang, J.K.; Liu, K.K.; Lee, Y.H.; Liang, C.T.; Chu, C.W.; Li, L.J. Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization. Nanoscale 2012, 4, 6637–6641. [Google Scholar] [CrossRef]
- Vangelista, S.; Cinquanta, E.; Martella, C.; Alia, M.; Longo, M.; Lamperti, A.; Mantovan, R.; Basset, F.B.; Pezzoli, F.; Molle, A. Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films. Nanotechnology 2016, 27, 175703. [Google Scholar] [CrossRef]
- Kang, K.; Xie, S.; Huang, L.; Han, Y.; Huang, P.Y.; Mak, K.F.; Kim, C.J.; Muller, D.; Park, J. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 2015, 520, 656. [Google Scholar] [CrossRef] [PubMed]
- Van Der Zande, A.M.; Huang, P.Y.; Chenet, D.A.; Berkelbach, T.C.; You, Y.; Lee, G.H.; Heinz, T.F.; Reichman, D.R.; Muller, D.A.; Hone, J.C. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 2013, 12, 554. [Google Scholar] [CrossRef] [PubMed]
- Najmaei, S.; Liu, Z.; Zhou, W.; Zou, X.; Shi, G.; Lei, S.; Yakobson, B.I.; Idrobo, J.C.; Ajayan, P.M.; Lou, J. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat. Mater. 2013, 12, 754. [Google Scholar] [CrossRef] [PubMed]
- Yu, Y.; Li, C.; Liu, Y.; Su, L.; Zhang, Y.; Cao, L. Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci. Rep. 2013, 3, 1866. [Google Scholar] [CrossRef]
- Lin, Z.; Zhao, Y.; Zhou, C.; Zhong, R.; Wang, X.; Tsang, Y.H.; Chai, Y. Controllable growth of large–size crystalline MoS2 and resist-free transfer assisted with a Cu thin film. Sci. Rep. 2015, 5, 18596. [Google Scholar] [CrossRef]
- Urban, F.; Martucciello, N.; Peters, L.; McEvoy, N.; Bartolomeo, A.D. Environmental effects on the electrical characteristics of back-gated WSe2 field-effect transistors. Nanomaterials 2018, 8, 901. [Google Scholar] [CrossRef]
- Barin, G.B.; Song, Y.; Gimenez, I.F.; Filho, A.G.S.; Barreto, L.S.; Kong, J. Optimized graphene transfer: Influence of polymethylmethacrylate (PMMA) layer concentration and baking time on graphene final performance. Carbon 2015, 84, 82–90. [Google Scholar] [CrossRef]
- Ahn, Y.; Kim, H.; Kim, Y.H.; Yi, Y.; Kim, S.I. Procedure of removing polymer residues and its influences on electronic and structural characteristics of graphene. Appl. Phys. Lett. 2013, 102, 091602. [Google Scholar] [CrossRef]
- Pirkle, A.; Chan, J.; Venugopal, A.; Hinojos, D.; Magnuson, C.W.; McDonnell, S.; Colombo, L.; Vogel, E.M.; Ruoff, R.S.; Wallace, R.M. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2. Appl. Phys. Lett. 2011, 99, 122108. [Google Scholar] [CrossRef]
- Brandon, J.; Taylor, R. Thermal properties of ceria and yttria partially stabilized zirconia thermal barrier coatings. Surf. Coat. Technol. 1989, 39, 143–151. [Google Scholar] [CrossRef]
- Wang, Y.; Cong, C.; Qiu, C.; Yu, T. Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS2 under uniaxial strain. Small 2013, 9, 2857–2861. [Google Scholar] [CrossRef] [PubMed]
- Kim, H.; Han, G.H.; Yun, S.J.; Zhao, J.; Keum, D.H.; Jeong, H.Y.; Ly, T.H.; Jin, Y.; Park, J.-H.; Moon, B.H.; et al. Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides. Nanotechnology 2017, 28, 36LT01. [Google Scholar] [CrossRef] [PubMed]
- Withanage, S.S.; Kalita, H.; Chung, H.S.; Roy, T.; Jung, Y.; Khondaker, S.I. Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS2 Using MoO3 Thin Film as a Precursor for Coevaporation. ACS Omega 2018, 3, 18943–18949. [Google Scholar] [CrossRef] [PubMed]
- Yue, R.; Nie, Y.; Walsh, L.A.; Addou, R.; Liang, C.; Lu, N.; Barton, A.T.; Zhu, H.; Che, Z.; Barrera, D.; et al. Nucleation and growth of WSe2: Enabling large grain transition metal dichalcogenides. 2D Mater. 2017, 4, 045019. [Google Scholar] [CrossRef]
- Li, H.; Zhang, Q.; Yap, C.C.R.; Tay, B.K.; Edwin, T.H.T.; Olivier, A.; Baillargeat, D. From bulk to monolayer MoS2: Evolution of Raman scattering. Adv. Funct. Mater. 2012, 22, 1385–1390. [Google Scholar] [CrossRef]
- Chakraborty, B.; Matte, H.R.; Sood, A.; Rao, C. Layer-dependent resonant Raman scattering of a few layer MoS2. J. Raman Spectrosc. 2013, 44, 92–96. [Google Scholar] [CrossRef]
- Yang, H.; Giri, A.; Moon, S.; Shin, S.; Myoung, J.M.; Jeong, U. Highly scalable synthesis of MoS2 thin films with precise thickness control via polymer-assisted deposition. Chem. Mater. 2017, 29, 5772–5776. [Google Scholar] [CrossRef]
- Jeon, J.; Jang, S.K.; Jeon, S.M.; Yoo, G.; Jang, Y.H.; Park, J.H.; Lee, S. Layer-controlled CVD growth of large-area two-dimensional MoS2 films. Nanoscale 2015, 7, 1688–1695. [Google Scholar] [CrossRef]
- Mikael, S.; Seo, J.-H.; Park, D.-W.; Kim, M.; Mi, H.; Javadi, A.; Gong, S.; Ma, Z. Triaxial compressive strain in bilayer graphene enabled by nitride stressor layer. Extreme Mechan. Lett. 2017, 11, 77–83. [Google Scholar] [CrossRef]
- Mikael, S.; Seo, J.-H.; Javadi, A.; Gong, S.; Ma, Z. Wrinkled bilayer graphene with wafer scale mechanical strain. Appl. Phys. Lett. 2016, 108, 183101. [Google Scholar] [CrossRef]
- Mi, H.; Mikael, S.; Liu, C.-C.; Seo, J.-H.; Gui, G.; Ma, A.L.; Nealey, P.F.; Ma, Z. Creating periodic local strain in monolayer graphene with nanopillars patterned by self-assembled block copolymer. Appl. Phys. Lett. 2015, 107, 143107. [Google Scholar] [CrossRef]
- Kim, M.; Mi, H.; Cho, M.; Seo, J.-H.; Zhou, W.; Gong, S.; Ma, Z. Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film. Appl. Phys. Lett. 2015, 106, 212107. [Google Scholar] [CrossRef]
- Liu, Z.; Amani, M.; Najmaei, S.; Xu, Q.; Zou, X.; Zhou, W.; Yu, T.; Qiu, C.; Birdwell, A.G.; Crowne, F.J.; et al. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. Nat. Commun. 2014, 5, 5246. [Google Scholar] [CrossRef] [PubMed]
© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Share and Cite
Zheng, Y.; Yuan, C.; Wei, S.; Kim, H.; Yao, F.; Seo, J.-H. Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate. Nanomaterials 2019, 9, 1456. https://doi.org/10.3390/nano9101456
Zheng Y, Yuan C, Wei S, Kim H, Yao F, Seo J-H. Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate. Nanomaterials. 2019; 9(10):1456. https://doi.org/10.3390/nano9101456
Chicago/Turabian StyleZheng, Yixiong, Chunyan Yuan, Sichen Wei, Hyun Kim, Fei Yao, and Jung-Hun Seo. 2019. "Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate" Nanomaterials 9, no. 10: 1456. https://doi.org/10.3390/nano9101456
APA StyleZheng, Y., Yuan, C., Wei, S., Kim, H., Yao, F., & Seo, J.-H. (2019). Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate. Nanomaterials, 9(10), 1456. https://doi.org/10.3390/nano9101456