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Nanomaterials 2018, 8(9), 705;

InPBi Quantum Dots for Super-Luminescence Diodes

Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, China
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China
Key Laboratory of Terahertz Technology, Chinese Academy of Sciences, Shanghai 200050, China
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296, Sweden
Authors to whom correspondence should be addressed.
Received: 16 August 2018 / Revised: 30 August 2018 / Accepted: 6 September 2018 / Published: 10 September 2018
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InPBi thin film has shown ultra-broad room temperature photoluminescence, which is promising for applications in super-luminescent diodes (SLDs) but met problems with low light emission efficiency. In this paper, InPBi quantum dot (QD) is proposed to serve as the active material for future InPBi SLDs. The quantum confinement for carriers and reduced spatial size of QD structure can improve light emission efficiently. We employ finite element method to simulate strain distribution inside QDs and use the result as input for calculating electronic properties. We systematically investigate different transitions involving carriers on the band edges and the deep levels as a function of Bi composition and InPBi QD geometry embedded in InAlAs lattice matched to InP. A flat QD shape with a moderate Bi content of a few percent over 3.2% would provide the optimal performance of SLDs with a bright and wide spectrum at a short center wavelength, promising for future optical coherence tomography applications. View Full-Text
Keywords: InPBi; quantum dot; finite element method; super-luminescent diode; emission spectrum InPBi; quantum dot; finite element method; super-luminescent diode; emission spectrum

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Zhang, L.; Song, Y.; Chen, Q.; Zhu, Z.; Wang, S. InPBi Quantum Dots for Super-Luminescence Diodes. Nanomaterials 2018, 8, 705.

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