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Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells via Metal Oxide

1
Department of Food and Environmental Engineering, Chuzhou Vocational and Technical College, Chuzhou 239000, China
2
The Education Ministry Key Laboratory of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Department of Chemistry, Shanghai Normal University, Shanghai 200234, China
*
Authors to whom correspondence should be addressed.
Nanomaterials 2018, 8(7), 505; https://doi.org/10.3390/nano8070505
Received: 13 June 2018 / Revised: 2 July 2018 / Accepted: 2 July 2018 / Published: 7 July 2018
Band-gap alignment engineering has now been extensively studied due to its high potential for application. Here we demonstrate a simple route to synthesize two metal oxide layers and align them together according to their bandgaps on the surface of crystalline silicon (c-Si) solar cells. The metal oxide layers not only extend absorption spectrum to generate extra carriers but also more efficiently separate electron–hole pairs. As a consequence, the photovoltaic performance of SnO2/CdO/Si double-layer solar cell (DLSC) is highly improved compared to the controlled Si solar cell, CdO/Si and SnO2/Si single-layer solar cells (SLSCs). Via alignment engineering, the SnO2/CdO/Si DLSC produces a short circuit photocurrent (Jsc) of 38.20 mA/cm2, an open circuit photovoltage (Voc) of 0.575 V and a fill factor (FF) of 68.7%, a conversion efficiency (η) of 15.09% under AM1.5 illumination. View Full-Text
Keywords: silicon solar cells; semiconductors; electron–hole pairs silicon solar cells; semiconductors; electron–hole pairs
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MDPI and ACS Style

Zhou, L.; Xiao, L.; Yang, H.; Liu, J.; Yu, X. Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells via Metal Oxide. Nanomaterials 2018, 8, 505.

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