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Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells via Metal Oxide

Department of Food and Environmental Engineering, Chuzhou Vocational and Technical College, Chuzhou 239000, China
The Education Ministry Key Laboratory of Resource Chemistry and Shanghai Key Laboratory of Rare Earth Functional Materials, Department of Chemistry, Shanghai Normal University, Shanghai 200234, China
Authors to whom correspondence should be addressed.
Nanomaterials 2018, 8(7), 505;
Received: 13 June 2018 / Revised: 2 July 2018 / Accepted: 2 July 2018 / Published: 7 July 2018
Band-gap alignment engineering has now been extensively studied due to its high potential for application. Here we demonstrate a simple route to synthesize two metal oxide layers and align them together according to their bandgaps on the surface of crystalline silicon (c-Si) solar cells. The metal oxide layers not only extend absorption spectrum to generate extra carriers but also more efficiently separate electron–hole pairs. As a consequence, the photovoltaic performance of SnO2/CdO/Si double-layer solar cell (DLSC) is highly improved compared to the controlled Si solar cell, CdO/Si and SnO2/Si single-layer solar cells (SLSCs). Via alignment engineering, the SnO2/CdO/Si DLSC produces a short circuit photocurrent (Jsc) of 38.20 mA/cm2, an open circuit photovoltage (Voc) of 0.575 V and a fill factor (FF) of 68.7%, a conversion efficiency (η) of 15.09% under AM1.5 illumination. View Full-Text
Keywords: silicon solar cells; semiconductors; electron–hole pairs silicon solar cells; semiconductors; electron–hole pairs
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Zhou, L.; Xiao, L.; Yang, H.; Liu, J.; Yu, X. Greatly Enhanced Photovoltaic Performance of Crystalline Silicon Solar Cells via Metal Oxide. Nanomaterials 2018, 8, 505.

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