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Nanomaterials 2018, 8(2), 77; https://doi.org/10.3390/nano8020077

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

1
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
3
School of Electronic, Electronical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101408, China
4
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
5
School of microelectronics, University of Chinese Academy of Sciences, Beijing 101408, China
*
Author to whom correspondence should be addressed.
Received: 30 December 2017 / Revised: 25 January 2018 / Accepted: 26 January 2018 / Published: 30 January 2018
(This article belongs to the Special Issue Thermoelectric Nanomaterials)
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Abstract

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. View Full-Text
Keywords: heavily boron-doped silicon layer; boron etch-stop; thermoelectric; silicon nanowire; ZT; nanostructures heavily boron-doped silicon layer; boron etch-stop; thermoelectric; silicon nanowire; ZT; nanostructures
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Ma, Z.; Liu, Y.; Deng, L.; Zhang, M.; Zhang, S.; Ma, J.; Song, P.; Liu, Q.; Ji, A.; Yang, F.; Wang, X. Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices. Nanomaterials 2018, 8, 77.

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