Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices
AbstractHeavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. View Full-Text
Share & Cite This Article
Ma, Z.; Liu, Y.; Deng, L.; Zhang, M.; Zhang, S.; Ma, J.; Song, P.; Liu, Q.; Ji, A.; Yang, F.; Wang, X. Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices. Nanomaterials 2018, 8, 77.
Ma Z, Liu Y, Deng L, Zhang M, Zhang S, Ma J, Song P, Liu Q, Ji A, Yang F, Wang X. Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices. Nanomaterials. 2018; 8(2):77.Chicago/Turabian Style
Ma, Zhe; Liu, Yang; Deng, Lingxiao; Zhang, Mingliang; Zhang, Shuyuan; Ma, Jing; Song, Peishuai; Liu, Qing; Ji, An; Yang, Fuhua; Wang, Xiaodong. 2018. "Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices." Nanomaterials 8, no. 2: 77.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.