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Article

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

1
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
3
School of Electronic, Electronical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101408, China
4
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
5
School of microelectronics, University of Chinese Academy of Sciences, Beijing 101408, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(2), 77; https://doi.org/10.3390/nano8020077
Received: 30 December 2017 / Revised: 25 January 2018 / Accepted: 26 January 2018 / Published: 30 January 2018
(This article belongs to the Special Issue Thermoelectric Nanomaterials)
Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. View Full-Text
Keywords: heavily boron-doped silicon layer; boron etch-stop; thermoelectric; silicon nanowire; ZT; nanostructures heavily boron-doped silicon layer; boron etch-stop; thermoelectric; silicon nanowire; ZT; nanostructures
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MDPI and ACS Style

Ma, Z.; Liu, Y.; Deng, L.; Zhang, M.; Zhang, S.; Ma, J.; Song, P.; Liu, Q.; Ji, A.; Yang, F.; Wang, X. Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices. Nanomaterials 2018, 8, 77. https://doi.org/10.3390/nano8020077

AMA Style

Ma Z, Liu Y, Deng L, Zhang M, Zhang S, Ma J, Song P, Liu Q, Ji A, Yang F, Wang X. Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices. Nanomaterials. 2018; 8(2):77. https://doi.org/10.3390/nano8020077

Chicago/Turabian Style

Ma, Zhe, Yang Liu, Lingxiao Deng, Mingliang Zhang, Shuyuan Zhang, Jing Ma, Peishuai Song, Qing Liu, An Ji, Fuhua Yang, and Xiaodong Wang. 2018. "Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices" Nanomaterials 8, no. 2: 77. https://doi.org/10.3390/nano8020077

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