Search Results (4)

Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO₂) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiN_x:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time $t_{\mathrm{anneal}}$ = 30 min and an annealing temperature 600 °C ≤ $T_{\mathrm{anneal}}$≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature $T_{\mathrm{anneal}}$ = 985 °C, the reactivated layers show high sheet conductance (G_sh) with G_sh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iV_OC) reaching iV_OC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p⁺⁺-poly-Si/SiO₂ contact passivation layers. Full article

Passivated, selective contacts in silicon solar cells consist of a double layer of highly doped polycrystalline silicon (poly Si) and thin interfacial silicon dioxide (SiO₂). This design concept allows for the highest efficiencies. Here, we report on a selective laser activation process, resulting in highly doped p⁺⁺-type poly Si on top of the SiO₂. In this double-layer structure, the p⁺⁺-poly Si layer serves as a layer for transporting the generated holes from the bulk to a metal contact and, therefore, needs to be highly conductive for holes. High boron-doping of the poly Si layers is one approach to establish the desired high conductivity. In a laser activation step, a laser pulse melts the poly Si layer, and subsequent rapid cooling of the Si melt enables electrically active boron concentrations exceeding the solid solubility limit. In addition to the high conductivity, the high active boron concentration in the poly Si layer allows maskless patterning of p⁺⁺-poly Si/SiO₂ layers by providing an etch stop layer in the Si etchant solution, which results in a locally structured p⁺⁺-poly Si/SiO₂ after the etching process. The challenge in the laser activation technique is not to destroy the thin SiO₂, which necessitates fine tuning of the laser process. In order to find the optimal processing window, we test laser pulse energy densities (H_p) in a broad range of 0.7 J/cm² ≤ H_p ≤ 5 J/cm² on poly Si layers with two different thicknesses d_{poly Si,1} = 155 nm and d_{poly Si,2} = 264 nm. Finally, the processing window 2.8 J/cm²≤ H_p ≤ 4 J/cm² leads to the highest sheet conductance (G_sh) without destroying the SiO₂ for both poly Si layer thicknesses. For both tested poly Si layers, the majority of the symmetric lifetime samples processed using these H_p achieve a good passivation quality with a high implied open circuit voltage (iV_OC) and a low saturation current density (J₀). The best sample achieves iV_OC = 722 mV and J₀ = 6.7 fA/cm² per side. This low surface recombination current density, together with the accompanying measurements of the doping profiles, suggests that the SiO₂ is not damaged during the laser process. We also observe that the passivation quality is independent of the tested poly Si layer thicknesses. The findings of this study show that laser-activated p⁺⁺-poly Si/SiO₂ are not only suitable for integration into advanced passivated contact solar cells, but also offer the possibility of maskless patterning of these stacks, substantially simplifying such solar cell production. Full article

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. Full article

Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP) based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure. Full article