Ma, Z.; Liu, Y.; Deng, L.; Zhang, M.; Zhang, S.; Ma, J.; Song, P.; Liu, Q.; Ji, A.; Yang, F.;
et al. Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices. Nanomaterials 2018, 8, 77.
https://doi.org/10.3390/nano8020077
AMA Style
Ma Z, Liu Y, Deng L, Zhang M, Zhang S, Ma J, Song P, Liu Q, Ji A, Yang F,
et al. Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices. Nanomaterials. 2018; 8(2):77.
https://doi.org/10.3390/nano8020077
Chicago/Turabian Style
Ma, Zhe, Yang Liu, Lingxiao Deng, Mingliang Zhang, Shuyuan Zhang, Jing Ma, Peishuai Song, Qing Liu, An Ji, Fuhua Yang,
and et al. 2018. "Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices" Nanomaterials 8, no. 2: 77.
https://doi.org/10.3390/nano8020077
APA Style
Ma, Z., Liu, Y., Deng, L., Zhang, M., Zhang, S., Ma, J., Song, P., Liu, Q., Ji, A., Yang, F., & Wang, X.
(2018). Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices. Nanomaterials, 8(2), 77.
https://doi.org/10.3390/nano8020077