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Nanomaterials 2018, 8(12), 1039; https://doi.org/10.3390/nano8121039

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

1
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
2
Institute of Photonics and Nanotechnology, Faculty of Physics, Vilnius University, Sauletekio 3, 10257 Vilnius, Lithuania
3
Nanotechnology & Integrated Bio-Engineering Centre (NIBEC), Ulster University, Shore Road, Newtownabbey BT37 0QB, UK
4
OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, D-93055 Regensburg, Germany
*
Author to whom correspondence should be addressed.
Received: 23 October 2018 / Revised: 6 December 2018 / Accepted: 10 December 2018 / Published: 12 December 2018
(This article belongs to the Special Issue Optoelectronic Nanodevices)
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Abstract

In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior. View Full-Text
Keywords: InN/p-GaN heterojunction; interface; photovoltaics InN/p-GaN heterojunction; interface; photovoltaics
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Svrcek, V.; Kolenda, M.; Kadys, A.; Reklaitis, I.; Dobrovolskas, D.; Malinauskas, T.; Lozach, M.; Mariotti, D.; Strassburg, M.; Tomašiūnas, R. Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. Nanomaterials 2018, 8, 1039.

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