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Open AccessArticle

Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis

Electrical Engineering Department, California Polytechnic State University, San Luis Obispo, CA 93407, USA
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Nanomaterials 2018, 8(12), 1045; https://doi.org/10.3390/nano8121045
Received: 16 November 2018 / Revised: 30 November 2018 / Accepted: 10 December 2018 / Published: 13 December 2018
(This article belongs to the Special Issue Optoelectronic Nanodevices)
Based on our recent work, this paper reviews our theoretical study on gallium nitride (GaN) light-emitting-diode (LED). The focus of the paper is to improve LED light extraction efficiency through various nano-grating designs. The gratings can be designed at different locations, such as at the top, the middle, and the bottom, on the LED. They also can be made of different materials. In this study, we first present a GaN LED error-grating simulation model. Second, nano Indium Tin Oxide (ITO) top gratings are studied and compared with conventional LED (CLED) using standing wave analysis. Third, we present results related to a patterned sapphire substrate (PSS), SiO2 Nanorod array (NR), and Ag bottom reflection layer. Finally, we investigate the nano-top ITO grating performance over different wavelengths to validate our design simulation, which focusing on a single wavelength of 460 nm. View Full-Text
Keywords: GaN; LED; nano-grating GaN; LED; nano-grating
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Jin, X.; Trieu, S.; Chavoor, G.J.; Halpin, G.M. Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis. Nanomaterials 2018, 8, 1045.

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