Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions
Abstract
:1. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusions
Author Contributions
Conflicts of Interest
References
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(a) GaSb | |||||
Acc. Vol. (kV) | 2 | 5 | 8 | 16 | 30 |
Ion range (nm) | 3.6 | 6.1 | 8.2 | 12.9 | 20.2 |
Vacancy (/ion) | 154 | 374 | 593 | 1169 | 2156 |
(b) InSb | |||||
Acc. Vol. (kV) | 2 | 5 | 8 | 16 | 30 |
Ion range (nm) | 4.0 | 6.8 | 9.0 | 13.9 | 21.9 |
Vacancy (/ion) | 166 | 408 | 647 | 1281 | 2382 |
(c) Ge | |||||
Acc. Vol. (kV) | 2 | 5 | 8 | 16 | 30 |
Ion range (nm) | 3.2 | 5.5 | 7.3 | 11.7 | 18.3 |
Vacancy (/ion) | 77 | 189 | 298 | 585 | 1076 |
(a) GaSb | |||||
Acc. Vol. (kV) | 2 | 5 | 8 | 16 | 30 |
Total | 3.553 | 4.939 | 5.671 | 6.367 | 6.928 |
III element | 1.80 | 2.48 | 2.87 | 3.24 | 3.52 |
V element | 1.75 | 2.46 | 2.80 | 3.13 | 3.41 |
(b) InSb | |||||
Acc. Vol. (kV) | 2 | 5 | 8 | 16 | 30 |
Total | 4.142 | 5.822 | 6.660 | 7.975 | 8.537 |
III element | 2.18 | 3.06 | 3.50 | 4.19 | 4.47 |
V element | 1.96 | 2.77 | 3.16 | 3.78 | 4.07 |
(c) Ge | |||||
Acc. Vol. (kV) | 2 | 5 | 8 | 16 | 30 |
Total | 2.965 | 4.215 | 4.810 | 5.766 | 4.801 |
Acc. Vol. (kV) | Scan | Scan Dose (ions/m2 scan) | Total Dose (ions/m2) | Vacancy (/ion) | Total Vacancy (/m2) | Vacancy (/ion) under 18 nm from the Surface | Total Vacancy (/m2) under 18 nm from the Surface |
---|---|---|---|---|---|---|---|
16 | 8 | 5 × 1018 | 4 × 1019 | 1169 | 4.7 × 1022 | 1363 | 4.1 × 1022 |
30 | 6 | 5 × 1018 | 3 × 1019 | 2156 | 6.5 × 1022 | 1034 | 4.1 × 1022 |
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Yanagida, Y.; Oishi, T.; Miyaji, T.; Watanabe, C.; Nitta, N. Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions. Nanomaterials 2017, 7, 180. https://doi.org/10.3390/nano7070180
Yanagida Y, Oishi T, Miyaji T, Watanabe C, Nitta N. Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions. Nanomaterials. 2017; 7(7):180. https://doi.org/10.3390/nano7070180
Chicago/Turabian StyleYanagida, Yusuke, Tomoya Oishi, Takashi Miyaji, Chiaki Watanabe, and Noriko Nitta. 2017. "Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions" Nanomaterials 7, no. 7: 180. https://doi.org/10.3390/nano7070180