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Nanomaterials 2013, 3(2), 229-241;

A Thermal Model for Carbon Nanotube Interconnects

School of Electrical Engineering and Computer Science, Louisiana State University, Baton Rouge, LA 70803, USA
Air Force Research Laboratory/Space Electronics Branch, Space Vehicles Directorate, Electronics Foundations Group, 3550 Aberdeen Avenue SE, Kirtland, NM 87117, USA
Author to whom correspondence should be addressed.
Received: 11 March 2013 / Revised: 10 April 2013 / Accepted: 12 April 2013 / Published: 26 April 2013
(This article belongs to the Special Issue CNT based Nanomaterials)
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In this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT) interconnects and compared with the earlier work. For 1 µm length single-wall carbon nanotube, 3 dB frequency in S12 parameter reduces to ~120 GHz from 1 THz considering Joule heating. It has been found that bias voltage has little effect on scattering parameters, while length has very strong effect on scattering parameters. View Full-Text
Keywords: SWCNT; VLSI interconnect; Joule heating; scattering SWCNT; VLSI interconnect; Joule heating; scattering

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Mohsin, K.M.; Srivastava, A.; Sharma, A.K.; Mayberry, C. A Thermal Model for Carbon Nanotube Interconnects. Nanomaterials 2013, 3, 229-241.

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