Zhou, B.; Zhan, R.; Teng, Z.; Xue, Y.; Hu, X.; Jiang, J.; Zhang, P.
Analytical Capacitance Model for Carbon Nanotube Field-Effect Transistors Including Interface-Trap Effects. Nanomaterials 2025, 15, 604.
https://doi.org/10.3390/nano15080604
AMA Style
Zhou B, Zhan R, Teng Z, Xue Y, Hu X, Jiang J, Zhang P.
Analytical Capacitance Model for Carbon Nanotube Field-Effect Transistors Including Interface-Trap Effects. Nanomaterials. 2025; 15(8):604.
https://doi.org/10.3390/nano15080604
Chicago/Turabian Style
Zhou, Bin, Rui Zhan, Zilin Teng, Yiheng Xue, Xiaoyan Hu, Jianhua Jiang, and Panpan Zhang.
2025. "Analytical Capacitance Model for Carbon Nanotube Field-Effect Transistors Including Interface-Trap Effects" Nanomaterials 15, no. 8: 604.
https://doi.org/10.3390/nano15080604
APA Style
Zhou, B., Zhan, R., Teng, Z., Xue, Y., Hu, X., Jiang, J., & Zhang, P.
(2025). Analytical Capacitance Model for Carbon Nanotube Field-Effect Transistors Including Interface-Trap Effects. Nanomaterials, 15(8), 604.
https://doi.org/10.3390/nano15080604
