Article Versions Notes

Yu H, Yang C, Chen Y, Shi J, Cao J, Geng Z, Wang Z, Wen H, Zhang E, Zhang Y, et al. Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm. Nanomaterials. 2025; 15(2):139. https://doi.org/10.3390/nano15020139

Yu, Hongguang, Chengao Yang, Yihang Chen, Jianmei Shi, Juntian Cao, Zhengqi Geng, Zhiyuan Wang, Haoran Wen, Enquan Zhang, Yu Zhang, and et al. 2025. "Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm" Nanomaterials 15, no. 2: 139. https://doi.org/10.3390/nano15020139

Yu, H., Yang, C., Chen, Y., Shi, J., Cao, J., Geng, Z., Wang, Z., Wen, H., Zhang, E., Zhang, Y., Tan, H., Wu, D., Xu, Y., Ni, H., & Niu, Z. (2025). Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm. Nanomaterials, 15(2), 139. https://doi.org/10.3390/nano15020139