Article Versions Notes

Lee Y-S, Chang C-H, Le B-S, Nguyen V-TT, Tien T-C, Lin H-C. Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs). Nanomaterials. 2025; 15(11):780. https://doi.org/10.3390/nano15110780

Lee, Yih-Shing, Chih-Hsiang Chang, Bing-Shin Le, Vo-Truong Thao Nguyen, Tsung-Cheng Tien, and Horng-Chih Lin. 2025. "Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs)" Nanomaterials 15, no. 11: 780. https://doi.org/10.3390/nano15110780

Lee, Y.-S., Chang, C.-H., Le, B.-S., Nguyen, V.-T. T., Tien, T.-C., & Lin, H.-C. (2025). Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs). Nanomaterials, 15(11), 780. https://doi.org/10.3390/nano15110780