Chen, Q.; Fu, W.; Han, J.; Zhang, X.; Lien, S.-Y.
Relation Between Thickness and TFTs Properties of HfO2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition. Nanomaterials 2025, 15, 719.
https://doi.org/10.3390/nano15100719
AMA Style
Chen Q, Fu W, Han J, Zhang X, Lien S-Y.
Relation Between Thickness and TFTs Properties of HfO2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition. Nanomaterials. 2025; 15(10):719.
https://doi.org/10.3390/nano15100719
Chicago/Turabian Style
Chen, Qizhen, Wanqiang Fu, Jing Han, Xiaoying Zhang, and Shui-Yang Lien.
2025. "Relation Between Thickness and TFTs Properties of HfO2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition" Nanomaterials 15, no. 10: 719.
https://doi.org/10.3390/nano15100719
APA Style
Chen, Q., Fu, W., Han, J., Zhang, X., & Lien, S.-Y.
(2025). Relation Between Thickness and TFTs Properties of HfO2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition. Nanomaterials, 15(10), 719.
https://doi.org/10.3390/nano15100719