Sun, X.; Li, J.; Qian, L.; Wang, D.; Huang, Z.; Guo, X.; Liu, T.; Xu, S.; Wang, L.; Xu, M.;
et al. A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors. Nanomaterials 2024, 14, 928.
https://doi.org/10.3390/nano14110928
AMA Style
Sun X, Li J, Qian L, Wang D, Huang Z, Guo X, Liu T, Xu S, Wang L, Xu M,
et al. A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors. Nanomaterials. 2024; 14(11):928.
https://doi.org/10.3390/nano14110928
Chicago/Turabian Style
Sun, Xin, Jiayang Li, Lewen Qian, Dawei Wang, Ziqiang Huang, Xinlong Guo, Tao Liu, Saisheng Xu, Liming Wang, Min Xu,
and et al. 2024. "A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors" Nanomaterials 14, no. 11: 928.
https://doi.org/10.3390/nano14110928
APA Style
Sun, X., Li, J., Qian, L., Wang, D., Huang, Z., Guo, X., Liu, T., Xu, S., Wang, L., Xu, M., & Zhang, D. W.
(2024). A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors. Nanomaterials, 14(11), 928.
https://doi.org/10.3390/nano14110928
