Park, C.; Yoon, J.-S.; Nam, K.; Jang, H.; Park, M.; Baek, R.-H.
Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps. Nanomaterials 2023, 13, 1451.
https://doi.org/10.3390/nano13091451
AMA Style
Park C, Yoon J-S, Nam K, Jang H, Park M, Baek R-H.
Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps. Nanomaterials. 2023; 13(9):1451.
https://doi.org/10.3390/nano13091451
Chicago/Turabian Style
Park, Chanyang, Jun-Sik Yoon, Kihoon Nam, Hyundong Jang, Minsang Park, and Rock-Hyun Baek.
2023. "Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps" Nanomaterials 13, no. 9: 1451.
https://doi.org/10.3390/nano13091451
APA Style
Park, C., Yoon, J.-S., Nam, K., Jang, H., Park, M., & Baek, R.-H.
(2023). Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps. Nanomaterials, 13(9), 1451.
https://doi.org/10.3390/nano13091451