Article Versions Notes

Yang Y, Zhu X, Ma Z, Hu H, Chen T, Li W, Xu J, Xu L, Chen K. Artificial HfO₂/TiO_x Synapses with Controllable Memory Window and High Uniformity for Brain-Inspired Computing. Nanomaterials. 2023; 13(3):605. https://doi.org/10.3390/nano13030605

Yang, Yang, Xu Zhu, Zhongyuan Ma, Hongsheng Hu, Tong Chen, Wei Li, Jun Xu, Ling Xu, and Kunji Chen. 2023. "Artificial HfO₂/TiO_x Synapses with Controllable Memory Window and High Uniformity for Brain-Inspired Computing" Nanomaterials 13, no. 3: 605. https://doi.org/10.3390/nano13030605

Yang, Y., Zhu, X., Ma, Z., Hu, H., Chen, T., Li, W., Xu, J., Xu, L., & Chen, K. (2023). Artificial HfO₂/TiO_x Synapses with Controllable Memory Window and High Uniformity for Brain-Inspired Computing. Nanomaterials, 13(3), 605. https://doi.org/10.3390/nano13030605