Reprint

Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29

Edited by
February 2024
248 pages
  • ISBN978-3-7258-0120-6 (Hardback)
  • ISBN978-3-7258-0119-0 (PDF)

This book is a reprint of the Special Issue Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29 that was published in

Chemistry & Materials Science
Engineering
Summary

The 29th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 29) served as a continuation of the biennial conference that has been held since 1965. ICANS 29 was held from 23 to 26 August at the campus of Nanjing University—a great venue for global academic researchers, industrial partners, and policymakers to come together and share their latest progress, breakthroughs, and new ideas on a wide range of topics in the fields of amorphous and nanocrystalline thin films and other nanostructured materials, as well as device applications.It was the first time that this prestigious event was held in China, and it provided the perfect opportunity for young Chinese researchers and students to participate more actively in academic exchange as a part of the conference and become familiarized with the latest developments in the fields in which they work. And despite a one-year delay due to the COVID-19 pandemic, ICANS 29 still attracted more than 300 paper submissions from 11 countries, including both on-site and virtual oral and poster presentations, which made it truly both a global and hybrid conference.

Format
  • Hardback
License
© 2022 by the authors; CC BY-NC-ND license
Keywords
Zn–air batteries; 2D MoS2; defects-embedded; OER; ORR; resistive switching memory; transient current; trap state; silicon nanowires; confined catalyst formation; in-plane solid–liquid–solid growth; ZnSnN2; nanocrystalline; Schottky diode; heterojunction; solar cell; perovskite solar cells; electron transport layer; low hysteresis; SnO2; TiO2; nonthermal plasma; Er-hyperdoped Si QDs; efficiency of energy transfer; coupling constant; strong coupling; phase change memory; Ge2Sb2Te5; phase transition; electron transport; artificial synapse; memristor; brain-inspired computing; high speed; thermal stability; crystallization; PCM; phase change random access memory; C-doped Sb2Te3; density functional theory; formation energy; continuously adjustable resistance value; porous conducting polymer; strain sensing; dual sensing mode; breathable; electroluminescence; erbium; Al2O3; Y2O3; atomic layer deposition; chalcogenides glasses; As2S3; transition metal doping; electronic structure and magnetism; density functional theory simulations; C–V memory window; nanocrystalline Si; floating gate memory; UVB emission; rare-earth orthoborate; gadolinium; phosphor; co-doping; Si nanocrystals; SiC; phosphorous; LED; OTS material; high scalability; high on-current density; PF model; a-SiCxNy:H encapsulation; CsPbBr3 QDs; stability; photoluminescence; Si quantum dots; core/shell structure; CVD; two-dimensional material; van der Waals heterostructure; trilayer; the first-principles calculation; microsphere arrays; nanofiber dielectric layers; piezocapacitive sensor; flexible pressure sensors; electronic skins; n/a