Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping
Abstract
:1. Introduction
2. Experimental Section
3. Results and Discussion
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Structure | Thickness (nm) | Deposition Method | I-V Characteristic | SET/RESET Voltage (V) | On/Off Ratio | Retention Time (s) | Ref |
---|---|---|---|---|---|---|---|
Au/Nb2O5/Pt | 60 | RF-sputtering | Bipolar | 0.96/−1.3 | 10 | - | [14] |
Cu/Nb2O5/Pt | 11–14 | PLD | Bipolar | 1.5/ −0.5–−1 | ~200 | ~5 × 103 | [16] |
Pt/Nb2O5/Pt | 26 | E-beam evaporation | Bipolar | 0.8/−0.8 | 20 | 3.6 × 104 | [28] |
W/Nb2O5/NbOx/Ru | - | DC-sputtering | Bipolar | 1.1/ −1.5–−1.8 | ~50 | - | [29] |
Al/Ti/SiO2:Nb2O5/TiN/Si | 18–22 | ALD | Bipolar | 1/−1 | <10 | - | [30] |
Pt/Nb2O5/Pt/TiN/SiO2/Si | 50 | DC-sputtering | Unipolar | 1.7/0.8 | 100 | 1.67 × 104 | [31] |
Pt/NbOx:N/Pt | ~15 | PLD | Bipolar | 0.4–1.0/ −0.4–−0.8 | ~103 | 6 × 104 | This work |
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Xu, J.; Zhu, Y.; Liu, Y.; Wang, H.; Zou, Z.; Ma, H.; Wu, X.; Xiong, R. Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping. Nanomaterials 2022, 12, 1029. https://doi.org/10.3390/nano12061029
Xu J, Zhu Y, Liu Y, Wang H, Zou Z, Ma H, Wu X, Xiong R. Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping. Nanomaterials. 2022; 12(6):1029. https://doi.org/10.3390/nano12061029
Chicago/Turabian StyleXu, Jing, Yuanyuan Zhu, Yong Liu, Hongjun Wang, Zhaorui Zou, Hongyu Ma, Xianke Wu, and Rui Xiong. 2022. "Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping" Nanomaterials 12, no. 6: 1029. https://doi.org/10.3390/nano12061029