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Journal: Nanomaterials, 2022
Volume: 12
Number: 1029
1029
Article: Improved Performance of NbO_x Resistive Switching Memory by In-Situ N Doping
Authors: by Jing Xu, Yuanyuan Zhu, Yong Liu, Hongjun Wang, Zhaorui Zou, Hongyu Ma, Xianke Wu and Rui Xiong
Link: https://www.mdpi.com/2079-4991/12/6/1029

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