Article Versions Notes

Xu J, Zhu Y, Liu Y, Wang H, Zou Z, Ma H, Wu X, Xiong R. Improved Performance of NbO_x Resistive Switching Memory by In-Situ N Doping. Nanomaterials. 2022; 12(6):1029. https://doi.org/10.3390/nano12061029

Xu, Jing, Yuanyuan Zhu, Yong Liu, Hongjun Wang, Zhaorui Zou, Hongyu Ma, Xianke Wu, and Rui Xiong. 2022. "Improved Performance of NbO_x Resistive Switching Memory by In-Situ N Doping" Nanomaterials 12, no. 6: 1029. https://doi.org/10.3390/nano12061029

Xu, J., Zhu, Y., Liu, Y., Wang, H., Zou, Z., Ma, H., Wu, X., & Xiong, R. (2022). Improved Performance of NbO_x Resistive Switching Memory by In-Situ N Doping. Nanomaterials, 12(6), 1029. https://doi.org/10.3390/nano12061029