Li, S.; Zhang, X.; Zhang, P.; Song, G.; Yuan, L.
Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer. Nanomaterials 2022, 12, 2783.
https://doi.org/10.3390/nano12162783
AMA Style
Li S, Zhang X, Zhang P, Song G, Yuan L.
Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer. Nanomaterials. 2022; 12(16):2783.
https://doi.org/10.3390/nano12162783
Chicago/Turabian Style
Li, Shasha, Xinan Zhang, Penglin Zhang, Guoxiang Song, and Li Yuan.
2022. "Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer" Nanomaterials 12, no. 16: 2783.
https://doi.org/10.3390/nano12162783
APA Style
Li, S., Zhang, X., Zhang, P., Song, G., & Yuan, L.
(2022). Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer. Nanomaterials, 12(16), 2783.
https://doi.org/10.3390/nano12162783