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Accidental Impurities in Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films Grown by Pulsed Laser Deposition and Their Impact on the Macroscopic Electric Properties
 
 
Article

Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect

National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
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Academic Editor: Dong-Joo Kim
Nanomaterials 2021, 11(8), 2124; https://doi.org/10.3390/nano11082124
Received: 29 July 2021 / Revised: 16 August 2021 / Accepted: 19 August 2021 / Published: 20 August 2021
(This article belongs to the Special Issue Ferroic Nanomaterials: From Synthesis to Applications)
Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are forming or not during the switching process. The relation between the polarization switching, the structural quality of the films and the negative capacitance was not studied in depth. Here, Pb(Zr0.2Ti0.8)O3 (PZT) layers were deposited by pulse laser deposition (PLD) and sol-gel (SG) on single crystal SrTiO3 (STO) and Si substrates, respectively. The structural quality was analyzed by X-ray diffraction and transmission electron microscopy, while the electric properties were investigated by performing hysteresis, dynamic dielectric measurements, and piezo-electric force microscopy analysis. It was found that the PZT layers grown by PLD on SRO/STO substrates are epitaxial while the layers deposited by SG on Pt/Si are polycrystalline. The polarization value decreases as the structure changes from epitaxial to polycrystalline, as well as the magnitude of the leakage current and of the differential negative capacitance, while the switching changes from homogeneous to inhomogeneous. The results are explained by the compensation rate of the depolarization field during the switching process, which is much faster in epitaxial films than in polycrystalline ones. View Full-Text
Keywords: polarization switching; epitaxial; ferroelectric; thin films polarization switching; epitaxial; ferroelectric; thin films
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MDPI and ACS Style

Pintilie, L.; Boni, G.A.; Chirila, C.F.; Stancu, V.; Trupina, L.; Istrate, C.M.; Radu, C.; Pintilie, I. Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect. Nanomaterials 2021, 11, 2124. https://doi.org/10.3390/nano11082124

AMA Style

Pintilie L, Boni GA, Chirila CF, Stancu V, Trupina L, Istrate CM, Radu C, Pintilie I. Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect. Nanomaterials. 2021; 11(8):2124. https://doi.org/10.3390/nano11082124

Chicago/Turabian Style

Pintilie, Lucian, Georgia Andra Boni, Cristina Florentina Chirila, Viorica Stancu, Lucian Trupina, Cosmin Marian Istrate, Cristian Radu, and Ioana Pintilie. 2021. "Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect" Nanomaterials 11, no. 8: 2124. https://doi.org/10.3390/nano11082124

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