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Article

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

1
College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China
2
Sino-Semiconductors Technologies Co., Ltd., Taizhou 225300, China
*
Author to whom correspondence should be addressed.
Academic Editor: Ion N. Mihailescu
Nanomaterials 2021, 11(8), 2070; https://doi.org/10.3390/nano11082070
Received: 27 July 2021 / Revised: 11 August 2021 / Accepted: 13 August 2021 / Published: 15 August 2021
(This article belongs to the Special Issue State-of-the-Art Nanophotonics Materials and Devices in China)
An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells were characterized. The simulations indicate that an InGaN laser diode with InGaN–GaN–InGaN delta barriers has a lower turn-on current, a higher laser power, and a higher slope efficiency than those with InGaN or conventional GaN barriers. These improvements originate from modified energy bands of the laser diodes with InGaN–GaN–InGaN delta barriers, which can suppress electron leakage out of, and enhance hole injection into, the active region. View Full-Text
Keywords: InGaN–GaN–InGaN delta barriers; InGaN; laser diodes; electron leakage; hole injection InGaN–GaN–InGaN delta barriers; InGaN; laser diodes; electron leakage; hole injection
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MDPI and ACS Style

Cheng, L.; Li, Z.; Zhang, J.; Lin, X.; Yang, D.; Chen, H.; Wu, S.; Yao, S. Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes. Nanomaterials 2021, 11, 2070. https://doi.org/10.3390/nano11082070

AMA Style

Cheng L, Li Z, Zhang J, Lin X, Yang D, Chen H, Wu S, Yao S. Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes. Nanomaterials. 2021; 11(8):2070. https://doi.org/10.3390/nano11082070

Chicago/Turabian Style

Cheng, Liwen, Zhenwei Li, Jiayi Zhang, Xingyu Lin, Da Yang, Haitao Chen, Shudong Wu, and Shun Yao. 2021. "Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes" Nanomaterials 11, no. 8: 2070. https://doi.org/10.3390/nano11082070

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