Article Versions Notes

Xie L, Zhu H, Zhang Y, Ai X, Li J, Wang G, Du A, Kong Z, Wang Q, Lu S, et al. Investigation on Ge_0.8Si_0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice. Nanomaterials. 2021; 11(6):1408. https://doi.org/10.3390/nano11061408

Xie, Lu, Huilong Zhu, Yongkui Zhang, Xuezheng Ai, Junjie Li, Guilei Wang, Anyan Du, Zhenzhen Kong, Qi Wang, Shunshun Lu, and et al. 2021. "Investigation on Ge_0.8Si_0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice" Nanomaterials 11, no. 6: 1408. https://doi.org/10.3390/nano11061408

Xie, L., Zhu, H., Zhang, Y., Ai, X., Li, J., Wang, G., Du, A., Kong, Z., Wang, Q., Lu, S., Li, C., Li, Y., Huang, W., & Radamson, H. H. (2021). Investigation on Ge_0.8Si_0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice. Nanomaterials, 11(6), 1408. https://doi.org/10.3390/nano11061408