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Article

Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device

1
Department of Chemical Engineering, Myongji University, Yongin-Si 17058, Korea
2
Department of Physics, Myongji University, Yongin-Si 17058, Korea
3
Department of Materials Sciences and Engineering, Myongji University, Yongin-Si 17058, Korea
4
Department of Materials Sciences and Engineering, KAIST, Daejeon-Si 34141, Korea
*
Author to whom correspondence should be addressed.
Academic Editor: Diana Vilela García
Nanomaterials 2021, 11(2), 441; https://doi.org/10.3390/nano11020441
Received: 11 January 2021 / Revised: 6 February 2021 / Accepted: 7 February 2021 / Published: 9 February 2021
(This article belongs to the Special Issue Smart Nano-Devices)
Square-shaped or rectangular nanoparticles (NPs) of lanthanum oxide (LaOx) were synthesized and layered by convective self-assembly to demonstrate an analog memristive device in this study. Along with non-volatile analog memory effect, selection diode property could be co-existent without any implementation of heterogeneous multiple stacks with ~1 μm thick LaOx NPs layer. Current–voltage (I–V) behavior of the LaOx NPs resistive switching (RS) device has shown an evolved current level with memristive behavior and additional rectification functionality with threshold voltage. The concurrent memristor and diode type selector characteristics were examined with electrical stimuli or spikes for the duration of 10–50 ms pulse biases. The pulsed spike increased current levels at a read voltage of +0.2 V sequentially along with ±7 V biases, which have emulated neuromorphic operation of long-term potentiation (LTP). This study can open a new application of rare-earth LaOx NPs as a component of neuromorphic synaptic device. View Full-Text
Keywords: analog resistive switching; square shape; lanthanum oxide; neuromorphic device analog resistive switching; square shape; lanthanum oxide; neuromorphic device
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MDPI and ACS Style

Kang, W.; Woo, K.; Na, H.B.; Kang, C.J.; Yoon, T.-S.; Kim, K.M.; Lee, H.H. Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device. Nanomaterials 2021, 11, 441. https://doi.org/10.3390/nano11020441

AMA Style

Kang W, Woo K, Na HB, Kang CJ, Yoon T-S, Kim KM, Lee HH. Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device. Nanomaterials. 2021; 11(2):441. https://doi.org/10.3390/nano11020441

Chicago/Turabian Style

Kang, Wonkyu, Kyoungmin Woo, Hyon B. Na, Chi J. Kang, Tae-Sik Yoon, Kyung M. Kim, and Hyun H. Lee 2021. "Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device" Nanomaterials 11, no. 2: 441. https://doi.org/10.3390/nano11020441

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