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Review

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

1
Dipartimento di Fisica e Astronomia “Ettore Majorana”, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy
2
Consiglio Nazionale delle Ricerche—Instituto Processi Chimico-Fisici (CNR-IPCF), Viale F. Stagno D’Alcontres 37, 98158 Messina, Italy
3
Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM) UoS Catania, Via Santa Sofia 64, 95123 Catania, Italy
*
Author to whom correspondence should be addressed.
Nanomaterials 2021, 11(2), 383; https://doi.org/10.3390/nano11020383
Received: 16 December 2020 / Revised: 28 January 2021 / Accepted: 1 February 2021 / Published: 3 February 2021
Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow’s technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach. View Full-Text
Keywords: silicon; silicon nanowires; MACE metal-assisted chemical etching; nanotechnology; CMOS-compatible silicon; silicon nanowires; MACE metal-assisted chemical etching; nanotechnology; CMOS-compatible
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MDPI and ACS Style

Leonardi, A.A.; Faro, M.J.L.; Irrera, A. Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review. Nanomaterials 2021, 11, 383. https://doi.org/10.3390/nano11020383

AMA Style

Leonardi AA, Faro MJL, Irrera A. Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review. Nanomaterials. 2021; 11(2):383. https://doi.org/10.3390/nano11020383

Chicago/Turabian Style

Leonardi, Antonio A., Maria J.L. Faro, and Alessia Irrera. 2021. "Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review" Nanomaterials 11, no. 2: 383. https://doi.org/10.3390/nano11020383

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