Article Versions Notes

Schilirò E, Giannazzo F, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Prystawko P, Kruszewski P, Leszczynski M, Cora I, et al. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition. Nanomaterials. 2021; 11(12):3316. https://doi.org/10.3390/nano11123316

Schilirò, Emanuela, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Paweł Prystawko, Piotr Kruszewski, Mike Leszczynski, Ildiko Cora, and et al. 2021. "Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition" Nanomaterials 11, no. 12: 3316. https://doi.org/10.3390/nano11123316

Schilirò, E., Giannazzo, F., Di Franco, S., Greco, G., Fiorenza, P., Roccaforte, F., Prystawko, P., Kruszewski, P., Leszczynski, M., Cora, I., Pécz, B., Fogarassy, Z., & Lo Nigro, R. (2021). Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition. Nanomaterials, 11(12), 3316. https://doi.org/10.3390/nano11123316