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Article

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

1
Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy
2
Department of Physics and Astronomy, University of Catania, 95123 Catania, Italy
3
Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary
4
Department of Physics and Chemistry Emilio Segrè, University of Palermo, 90123 Palermo, Italy
5
ATEN Center, University of Palermo, 90123 Palermo, Italy
*
Authors to whom correspondence should be addressed.
Academic Editor: Junying Zhang
Nanomaterials 2022, 12(2), 182; https://doi.org/10.3390/nano12020182
Received: 3 December 2021 / Revised: 1 January 2022 / Accepted: 3 January 2022 / Published: 6 January 2022
(This article belongs to the Special Issue Nanotechnology for Electronic Materials and Devices)
In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8 nm to ~4.2 nm) on a SiO2/Si substrate. XPS analyses confirmed that the sulfurization was very effective in the reduction of the oxide to MoS2, with only a small percentage of residual MoO3 present in the final film. High-resolution TEM/STEM analyses revealed the formation of few (i.e., 2–3 layers) of MoS2 nearly aligned with the SiO2 surface in the case of the thinnest (~2.8 nm) MoO3 film, whereas multilayers of MoS2 partially standing up with respect to the substrate were observed for the ~4.2 nm one. Such different configurations indicate the prevalence of different mechanisms (i.e., vapour-solid surface reaction or S diffusion within the film) as a function of the thickness. The uniform thickness distribution of the few-layer and multilayer MoS2 was confirmed by Raman mapping. Furthermore, the correlative plot of the characteristic A1g-E2g Raman modes revealed a compressive strain (ε ≈ −0.78 ± 0.18%) and the coexistence of n- and p-type doped areas in the few-layer MoS2 on SiO2, where the p-type doping is probably due to the presence of residual MoO3. Nanoscale resolution current mapping by C-AFM showed local inhomogeneities in the conductivity of the few-layer MoS2, which are well correlated to the lateral changes in the strain detected by Raman. Finally, characteristic spectroscopic signatures of the defects/disorder in MoS2 films produced by sulfurization were identified by a comparative analysis of Raman and photoluminescence (PL) spectra with CVD grown MoS2 flakes. View Full-Text
Keywords: MoS2; sulfurization; XPS; Raman; TEM; C-AFM; photoluminescence MoS2; sulfurization; XPS; Raman; TEM; C-AFM; photoluminescence
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MDPI and ACS Style

Panasci, S.E.; Koos, A.; Schilirò, E.; Di Franco, S.; Greco, G.; Fiorenza, P.; Roccaforte, F.; Agnello, S.; Cannas, M.; Gelardi, F.M.; Sulyok, A.; Nemeth, M.; Pécz, B.; Giannazzo, F. Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization. Nanomaterials 2022, 12, 182. https://doi.org/10.3390/nano12020182

AMA Style

Panasci SE, Koos A, Schilirò E, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Agnello S, Cannas M, Gelardi FM, Sulyok A, Nemeth M, Pécz B, Giannazzo F. Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization. Nanomaterials. 2022; 12(2):182. https://doi.org/10.3390/nano12020182

Chicago/Turabian Style

Panasci, Salvatore E., Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Simonpietro Agnello, Marco Cannas, Franco M. Gelardi, Attila Sulyok, Miklos Nemeth, Béla Pécz, and Filippo Giannazzo. 2022. "Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization" Nanomaterials 12, no. 2: 182. https://doi.org/10.3390/nano12020182

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