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Journal: Nanomaterials, 2021
Volume: 11
Number: 2466
2466
Article: Low Resistance Asymmetric III-Nitride Tunnel Junctions Designed by Machine Learning
Authors: by Rongyu Lin, Peng Han, Yue Wang, Ronghui Lin, Yi Lu, Zhiyuan Liu, Xiangliang Zhang and Xiaohang Li
Link: https://www.mdpi.com/2079-4991/11/10/2466

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