Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows
Abstract
:1. Introduction
2. Materials and Methods
2.1. Samples
2.2. SAE Simulation Model
3. Results and Discussion
3.1. Growth Rate Enhancement (GRE) Effect in GaAs Layers Grown by SAE
3.2. Surface Morphology of GaAs Layers
3.3. Microphotoluminescence Spectra
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Sample | Epitaxy Type | Composition | Window/Mask µm | Growth Rate GaAs, nm/min | Growth Time |
---|---|---|---|---|---|
St-L-L | Standard | GaAs layer | - | 18.8 | 5 min 20 s |
St-L-H | Standard | GaAs layer | - | 37.6 | 10 min 40 s |
St-ML | Standard | AlGaAs/GaAs/InGaAs multilayer structure | - | 18.8 | 10 s 2 |
SAE-L-N | Selective | GaAs layer | 60/340 | 90.2–99.6 1 | 2 min |
SAE-L-W | Selective | GaAs layer | 100/100 | 32.9–37.4 1 | 4 min |
SAE-ML-W | Selective | AlGaAs/GaAs/InGaAs multilayer structure | 100/100 | 32.9–37.4 1 | 10 s 2 |
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Shamakhov, V.; Nikolaev, D.; Slipchenko, S.; Fomin, E.; Smirnov, A.; Eliseyev, I.; Pikhtin, N.; Kop`ev, P. Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows. Nanomaterials 2021, 11, 11. https://doi.org/10.3390/nano11010011
Shamakhov V, Nikolaev D, Slipchenko S, Fomin E, Smirnov A, Eliseyev I, Pikhtin N, Kop`ev P. Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows. Nanomaterials. 2021; 11(1):11. https://doi.org/10.3390/nano11010011
Chicago/Turabian StyleShamakhov, Viktor, Dmitriy Nikolaev, Sergey Slipchenko, Evgenii Fomin, Alexander Smirnov, Ilya Eliseyev, Nikita Pikhtin, and Peter Kop`ev. 2021. "Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows" Nanomaterials 11, no. 1: 11. https://doi.org/10.3390/nano11010011