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Open AccessArticle

Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses

1
Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
2
School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan
3
Center for Nanotechnology in Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan
4
Advanced Technology Research Laboratories, Idemitsu Kosan Co. Ltd., Sodegaura, Chiba 299-0293, Japan
*
Authors to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 617; https://doi.org/10.3390/nano10040617
Received: 25 February 2020 / Revised: 21 March 2020 / Accepted: 24 March 2020 / Published: 27 March 2020
Thin-film transistor (TFT) devices composed of metal oxide semiconductors have attracted tremendous research attention globally in recent years. Owing to their ability to offer mobility, metal oxide semiconductor materials can enable high-performance TFTs for next-generation integrated display devices. Nevertheless, further breakthroughs of metal oxide TFTs are mainly obstructed by their long-term variability, the reason for which is not yet fully understood. Herein, TFTs based on InSnZnO (ITZO) with various thicknesses (TITZO) were prepared and their long-term stabilities under test temperatures and drain current stress were investigated. The results indicate that ITZO TFTs exhibit outstanding electrical properties regardless of the TITZO, including a high saturated mobility of over 35 cm2V−1s−1 and sharp subthreshold swing. Note that the transfer and output characteristic curves of the device with a thick TITZO of 100 nm express an abnormal current surge when high gate and drain voltages are exerted, which is attributed to the floating body effect, caused when the imposed electric field induces impact ionization near the drain side. More interestingly, these drain current stress results further suggest that the abnormal shift behavior of the electrical properties of the ITZO TFTs with a TITZO of greater than 75 nm is observed to deteriorate gradually with increasing temperature and drain current bias. This study addresses that such a degradation effect should be restrained for the operation of high-mobility devices. View Full-Text
Keywords: drain current bias; test temperature; InSnZnO; TFT device; channel layer thickness drain current bias; test temperature; InSnZnO; TFT device; channel layer thickness
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MDPI and ACS Style

Wang, D.; Furuta, M.; Tomai, S.; Yano, K. Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses. Nanomaterials 2020, 10, 617.

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