Ben Gouider Trabelsi, A.; V. Kusmartsev, F.; Kusmartseva, A.; H. Alkallas, F.; AlFaify, S.; Shkir, M.
Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC. Nanomaterials 2020, 10, 2234.
https://doi.org/10.3390/nano10112234
AMA Style
Ben Gouider Trabelsi A, V. Kusmartsev F, Kusmartseva A, H. Alkallas F, AlFaify S, Shkir M.
Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC. Nanomaterials. 2020; 10(11):2234.
https://doi.org/10.3390/nano10112234
Chicago/Turabian Style
Ben Gouider Trabelsi, A., F. V. Kusmartsev, A. Kusmartseva, F. H. Alkallas, S. AlFaify, and Mohd Shkir.
2020. "Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC" Nanomaterials 10, no. 11: 2234.
https://doi.org/10.3390/nano10112234
APA Style
Ben Gouider Trabelsi, A., V. Kusmartsev, F., Kusmartseva, A., H. Alkallas, F., AlFaify, S., & Shkir, M.
(2020). Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC. Nanomaterials, 10(11), 2234.
https://doi.org/10.3390/nano10112234