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Journal: Nanomaterials, 2020
Volume: 10
Number: 2116

Article: Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Authors: by Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn and Jong-Won Lim
Link: https://www.mdpi.com/2079-4991/10/11/2116

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