MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
Abstract
:1. Introduction
2. Experimental Details
3. Results and Discussion
4. Conclusions
Supplementary Materials
Author Contributions
Acknowledgments
Conflicts of Interest
References
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Sample | CGaN (Å) | CInGaN (Å) | In% | Relaxation (%) |
---|---|---|---|---|
InGaN/GaN on sapphire (760 °C) | 5.186 | 5.280 | 11 | 3.9 |
InGaN/GaN on HEMT (760 °C) | 5.179 | 5.272 | 16 | 30 |
InGaN/GaN on HEMT (780 °C) | 5.180 | 5.269 | 14 | 73 |
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Matsuura, H.; Onuma, T.; Sumiya, M.; Yamaguchi, T.; Ren, B.; Liao, M.; Honda, T.; Sang, L. MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template. Appl. Sci. 2019, 9, 1746. https://doi.org/10.3390/app9091746
Matsuura H, Onuma T, Sumiya M, Yamaguchi T, Ren B, Liao M, Honda T, Sang L. MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template. Applied Sciences. 2019; 9(9):1746. https://doi.org/10.3390/app9091746
Chicago/Turabian StyleMatsuura, Haruka, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda, and Liwen Sang. 2019. "MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template" Applied Sciences 9, no. 9: 1746. https://doi.org/10.3390/app9091746