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Open AccessArticle

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

1
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2
Hefei IRICO Epilight Technology CO., Ltd., Hefei 230000, China
3
The Institute of Microelectronics, Peking University, Beijing 100871, China
4
Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
*
Authors to whom correspondence should be addressed.
Appl. Sci. 2019, 9(11), 2373; https://doi.org/10.3390/app9112373
Received: 25 April 2019 / Revised: 26 May 2019 / Accepted: 29 May 2019 / Published: 11 June 2019
(This article belongs to the Special Issue III-V Nitride: Materials, Physics and Devices)
The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are applied to analyze the vertical leakage mechanisms. The activation energy (Ea) for p-type case is higher than that for n-type at 0–600 V obtained by temperature-dependent current-voltage measurements. An additional depletion region in the region of 0–400 V forms at the AlN/p-Si interface but not for AlN/n-Si. That depletion region leads to a decrease of electron injection and hence effectively reduces the VLC. While in the region of 400–600 V, the electron injection from p-Si substrate increases quickly compared to n-Si substrate, due to the occurrence of impact ionization in the p-Si substrate depletion region. The comparative results indicate that the doping type of low-resistivity substrate plays a key role for VLC. View Full-Text
Keywords: p-type Si substrate; n-type Si substrate; vertical leakage current; electron injection; impact ionization p-type Si substrate; n-type Si substrate; vertical leakage current; electron injection; impact ionization
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Song, C.; Yang, X.; Ji, P.; Tang, J.; Wu, S.; Xu, Y.; Imran, A.; Wang, M.; Yang, Z.; Xu, F.; Wang, X.; Ge, W.; Shen, B. Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs. Appl. Sci. 2019, 9, 2373.

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