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Appl. Sci. 2019, 9(7), 1511; https://doi.org/10.3390/app9071511

Solution-Based Synthesis and Processing of Metal Chalcogenides for Thermoelectric Applications

1,*,†, 2,†, 2 and 2,3,*
1
Department of Building, School of Design and Environment, National University of Singapore, 4 Architecture Drive, Singapore 117566, Singapore
2
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634, Singapore
3
Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
*
Authors to whom correspondence should be addressed.
Both authors contribute equally to this manuscript.
Received: 2 March 2019 / Revised: 27 March 2019 / Accepted: 3 April 2019 / Published: 11 April 2019
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Abstract

Metal chalcogenide materials are current mainstream thermoelectric materials with high conversion efficiency. This review provides an overview of the scalable solution-based methods for controllable synthesis of various nanostructured and thin-film metal chalcogenides, as well as their properties for thermoelectric applications. Furthermore, the state-of-art ink-based processing method for fabrication of thermoelectric generators based on metal chalcogenides is briefly introduced. Finally, the perspective on this field with regard to material production and device development is also commented upon. View Full-Text
Keywords: metal chalcogenides; thermoelectric; solution-based synthesis; ink-based processing; thermoelectric generator metal chalcogenides; thermoelectric; solution-based synthesis; ink-based processing; thermoelectric generator
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Shah, K.W.; Wang, S.-X.; Zheng, Y.; Xu, J. Solution-Based Synthesis and Processing of Metal Chalcogenides for Thermoelectric Applications. Appl. Sci. 2019, 9, 1511.

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