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A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

1
Department of Electro-Optics and Photonics, University of Dayton, Dayton, OH 45469, USA
2
Department of Physics, University of Dayton, Dayton, OH 45469, USA
*
Author to whom correspondence should be addressed.
Appl. Sci. 2019, 9(3), 530; https://doi.org/10.3390/app9030530
Received: 14 December 2018 / Revised: 26 January 2019 / Accepted: 31 January 2019 / Published: 4 February 2019
(This article belongs to the Special Issue Advanced Applications of Phase Change Materials)
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Abstract

Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due to their high write and read speeds, reversible phase transition, high degree of scalability, low power consumption, good data retention, and multi-level storage capability. However, GST-based PCMs have shown recent promise in other domains, such as in spatial light modulation, beam steering, and neuromorphic computing. This paper reviews the progress in GST-based PCMs and methods for improving the performance within the context of new applications that have come to light in recent years. View Full-Text
Keywords: phase-change materials; GST; non-volatile memory; electrical properties; optical properties; fabrication methods phase-change materials; GST; non-volatile memory; electrical properties; optical properties; fabrication methods
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Guo, P.; Sarangan, A.M.; Agha, I. A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators. Appl. Sci. 2019, 9, 530.

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