Next Article in Journal
Quantum Bits with Macroscopic Topologically Protected States in Semiconductor Devices
Next Article in Special Issue
Optical Conveyor Belts for Chiral Discrimination: Influence of De-Phasing Parameter
Previous Article in Journal
Packed Bed Photoreactor for the Removal of Water Pollutants Using Visible Light Emitting Diodes
Previous Article in Special Issue
Optical Assembling of Micro-Particles at a Glass–Water Interface with Diffraction Patterns Caused by the Limited Aperture of Objective
Open AccessLetter

A High-Power and Highly Efficient Semi-Conductor MOPA System for Lithium Atomic Physics

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dong Nanhu Road 3888, Changchun 130033, China
*
Author to whom correspondence should be addressed.
Appl. Sci. 2019, 9(3), 471; https://doi.org/10.3390/app9030471
Received: 27 November 2018 / Revised: 28 December 2018 / Accepted: 11 January 2019 / Published: 30 January 2019
(This article belongs to the Special Issue Optical Trapping)
A compact and highly efficient 670.8-nm semi-conductor master oscillator power amplifier (MOPA) system, with a unique optical design, is demonstrated. The MOPA system achieves a continuous-wave (CW) output power of 2.2 W, which is much higher than commercial products using semi-conductor devices. By comparing solid state lasers and dye lasers, higher wall-plug efficiency (WPE) of 20 % is achieved. Our developed laser system also achieves spectral line-width of 0.3 pm (200 MHz) and mode-hop free tuning range of 49 pm (32.6 GHz), which is very suitable for experiments of lithium atomic physics at several-watt power levels, such as Bose-Einstein condensation (BEC) and isotope absorption spectroscopy. View Full-Text
Keywords: laser optical system; MOPA; semiconductor optical amplifier; beam combination laser optical system; MOPA; semiconductor optical amplifier; beam combination
Show Figures

Figure 1

MDPI and ACS Style

Wu, H.; Zhu, H.; Zhang, J.; Peng, H.; Qin, L.; Ning, Y. A High-Power and Highly Efficient Semi-Conductor MOPA System for Lithium Atomic Physics. Appl. Sci. 2019, 9, 471. https://doi.org/10.3390/app9030471

AMA Style

Wu H, Zhu H, Zhang J, Peng H, Qin L, Ning Y. A High-Power and Highly Efficient Semi-Conductor MOPA System for Lithium Atomic Physics. Applied Sciences. 2019; 9(3):471. https://doi.org/10.3390/app9030471

Chicago/Turabian Style

Wu, Hao; Zhu, Hongbo; Zhang, Jianwei; Peng, Hangyu; Qin, Li; Ning, Yongqiang. 2019. "A High-Power and Highly Efficient Semi-Conductor MOPA System for Lithium Atomic Physics" Appl. Sci. 9, no. 3: 471. https://doi.org/10.3390/app9030471

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop