Next Article in Journal
New Evolutionary Algorithm for Optimizing Hydropower Generation Considering Multireservoir Systems
Next Article in Special Issue
Coupling and Trapping of Light in Thin-Film Solar Cells Using Modulated Interface Textures
Previous Article in Journal
Study on Low-Speed Stability of a Motorcycle
Open AccessArticle

Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

1
Department of Electro-Optical Engineering, National United University, 2, Lienda, Miaoli 26063, Taiwan
2
Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi 62102, Taiwan
3
Department of Applied Physics, National University of Kaohsiung, 700, Kaohsiung University Rd., Nanzih District, Kaohsiung 81148, Taiwan
4
Department of Chest Medicine, Kaohsiung Armed Forced General Hospital, 2, Zhongzheng 1st. Rd., Lingya District, Kaohsiung City 80284, Taiwan
*
Authors to whom correspondence should be addressed.
Appl. Sci. 2019, 9(11), 2279; https://doi.org/10.3390/app9112279
Received: 4 April 2019 / Revised: 29 May 2019 / Accepted: 30 May 2019 / Published: 3 June 2019
InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral strain relaxation in growth geometry. We present the further growth optimization and innovative characterization of InGaN layers overgrown on different structures with varying In concentrations. The photoelectrical and optical properties of the InGaN layers with/without capping GaN layer are investigated by time-resolved picosecond transient grating and temperature dependence photoluminescence. We note a 10-fold increase in carrier lifetime in the InGaN layers when the sample structure changed from PIN to single InGaN layer. View Full-Text
Keywords: carrier dynamics; InGaN; four-wave maxing; solar cell; transient grating carrier dynamics; InGaN; four-wave maxing; solar cell; transient grating
Show Figures

Figure 1

MDPI and ACS Style

Ye, Z.T.; Nguyen, H.T.; Feng, S.-W.; Wang, H.-C.; Chou, H.-L. Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations. Appl. Sci. 2019, 9, 2279.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop