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Open AccessArticle

Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations

Department of Electro-Optical Engineering, National United University, 2, Lienda, Miaoli 26063, Taiwan
Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi 62102, Taiwan
Department of Applied Physics, National University of Kaohsiung, 700, Kaohsiung University Rd., Nanzih District, Kaohsiung 81148, Taiwan
Department of Chest Medicine, Kaohsiung Armed Forced General Hospital, 2, Zhongzheng 1st. Rd., Lingya District, Kaohsiung City 80284, Taiwan
Authors to whom correspondence should be addressed.
Appl. Sci. 2019, 9(11), 2279;
Received: 4 April 2019 / Revised: 29 May 2019 / Accepted: 30 May 2019 / Published: 3 June 2019
InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral strain relaxation in growth geometry. We present the further growth optimization and innovative characterization of InGaN layers overgrown on different structures with varying In concentrations. The photoelectrical and optical properties of the InGaN layers with/without capping GaN layer are investigated by time-resolved picosecond transient grating and temperature dependence photoluminescence. We note a 10-fold increase in carrier lifetime in the InGaN layers when the sample structure changed from PIN to single InGaN layer. View Full-Text
Keywords: carrier dynamics; InGaN; four-wave maxing; solar cell; transient grating carrier dynamics; InGaN; four-wave maxing; solar cell; transient grating
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Ye, Z.T.; Nguyen, H.T.; Feng, S.-W.; Wang, H.-C.; Chou, H.-L. Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations. Appl. Sci. 2019, 9, 2279.

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