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Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy

1
Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai 599-8531, Japan
2
The Research Institute for Molecular Electronic Devices, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai 599-8531, Japan
3
Osaka Research Institute of Industrial Science and Technology, 2-7-1 Ayumino, Izumi, Osaka 594-1157, Japan
4
Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
*
Authors to whom correspondence should be addressed.
Present address: Department of Advanced Functional Materials Research, Takasaki Advanced Radiation Research Institute, Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
Appl. Sci. 2018, 8(9), 1493; https://doi.org/10.3390/app8091493
Received: 3 August 2018 / Revised: 20 August 2018 / Accepted: 21 August 2018 / Published: 29 August 2018
(This article belongs to the Special Issue Semiconducting Polymer for Organic Transistors)
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Abstract

Information on localized states at the interfaces of solution-processed organic semiconductors and polymer gate insulators is critical to the development of printable organic field-effect transistors (OFETs) with good electrical performance. This paper reports on the use of impedance spectroscopy to determine the energy distribution of the density of interface states in organic metal-insulator-semiconductor (MIS) capacitors based on poly(3-hexylthiophene) (P3HT) with three different polymer gate insulators, including polyimide, poly(4-vinylphenol), and poly(methylsilsesquioxane). The findings of the study indicate that the impedance characteristics of the P3HT MIS capacitors are strongly affected by patterning and thermal annealing of the organic semiconductor films. To extract the interface-state distributions from the conductance of the P3HT MIS capacitors, an equivalent circuit model with continuum trap states is used, which also takes the band-bending fluctuations into consideration. In addition, the relationship between the determined interface states and the electrical characteristics of P3HT-based OFETs is investigated. View Full-Text
Keywords: organic metal-insulator-semiconductor capacitor; organic field-effect transistor; polymer gate insulator; interface states; impedance spectroscopy organic metal-insulator-semiconductor capacitor; organic field-effect transistor; polymer gate insulator; interface states; impedance spectroscopy
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Hatta, H.; Miyagawa, Y.; Nagase, T.; Kobayashi, T.; Hamada, T.; Murakami, S.; Matsukawa, K.; Naito, H. Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy. Appl. Sci. 2018, 8, 1493.

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