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Open AccessArticle

Sharp Switching Characteristics of Single Electron Transistor with Discretized Charge Input

Department of Engineering Science, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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Academic Editor: Greg Snider
Appl. Sci. 2016, 6(8), 214; https://doi.org/10.3390/app6080214
Received: 7 May 2016 / Revised: 20 July 2016 / Accepted: 22 July 2016 / Published: 29 July 2016
(This article belongs to the Special Issue Applied Single-Electron Transistors)
For the low-power consumption analog and digital circuit applications based on a single-electron transistor, enhancement of its switching performance is required. Our previous works analytically and numerically demonstrated that a discretized charge input device, which comprised a tunnel junction and two capacitors, improved the gain characteristics of single-electron devices. We report the design and fabrication of an aluminum-based single-electron transistor having the discretized charge input function. Flat-plate and interdigital geometries were employed for adjusting capacitances of grounded and the coupling capacitors. The sample exhibited clear switching on input-output characteristics at the finite temperature. View Full-Text
Keywords: input discretizer; Coulomb blockade input discretizer; Coulomb blockade
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MDPI and ACS Style

Takiguchi, M.; Shimada, H.; Mizugaki, Y. Sharp Switching Characteristics of Single Electron Transistor with Discretized Charge Input. Appl. Sci. 2016, 6, 214.

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