Article Versions Notes

Huang Y, Xie X, Zhang Z, Dong P, Li Z, Chen D, Zhu W, Zhao S, Feng Q, Zhang J, et al. Enhancement-Mode Heterojunction Vertical β-Ga₂O₃ MOSFET with a P-Type Oxide Current-Blocking Layer. Applied Sciences. 2022; 12(3):1757. https://doi.org/10.3390/app12031757

Huang, Yuwen, Xiaoping Xie, Zeyulin Zhang, Peng Dong, Zhe Li, Dazheng Chen, Weidong Zhu, Shenglei Zhao, Qian Feng, Jincheng Zhang, and et al. 2022. "Enhancement-Mode Heterojunction Vertical β-Ga₂O₃ MOSFET with a P-Type Oxide Current-Blocking Layer" Applied Sciences 12, no. 3: 1757. https://doi.org/10.3390/app12031757

Huang, Y., Xie, X., Zhang, Z., Dong, P., Li, Z., Chen, D., Zhu, W., Zhao, S., Feng, Q., Zhang, J., Zhang, C., & Hao, Y. (2022). Enhancement-Mode Heterojunction Vertical β-Ga₂O₃ MOSFET with a P-Type Oxide Current-Blocking Layer. Applied Sciences, 12(3), 1757. https://doi.org/10.3390/app12031757