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Article

Electronic Band Structures of the Possible Topological Insulator Pb2BiBrO6 and Pb2SeTeO6 Double Perovskite: An Ab Initio Study

1
Center for General Education, Chang Gung University, Taoyuan 33302, Taiwan
2
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
3
Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
4
Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung 402, Taiwan
5
Center for General Education, National Taiwan Normal University, Taipei 10610, Taiwan
*
Authors to whom correspondence should be addressed.
Appl. Sci. 2022, 12(12), 5913; https://doi.org/10.3390/app12125913
Submission received: 2 May 2022 / Revised: 31 May 2022 / Accepted: 7 June 2022 / Published: 10 June 2022

Abstract

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Featured Application

This work offers a detailed description of the topological insulator behavior and the crystal structure of the Pb2AA’O6 double perovskites.

Abstract

Using the frameworks of density functional theory, we found a new class of three-dimensional (3D) topological insulators (TIs) in Pb2BiBrO6 and Pb2SeTeO6 double perovskites. Our ab initio theoretical calculations show that Pb2BiBrO6 and Pb2SeTeO6 are Z2 nontrivial, and their bandgaps are 0.390 eV and 0.181 eV, respectively. The topology comes from two mechanisms. Firstly, the band inversion occurs at Γ point in the absence of spin-orbit interactions and secondly, the bandgap is induced by the SOC. This results in a larger bandgap for this new class of topological insulators than conventional TI. In Pb2BiBrO6 double perovskites, our slab calculations confirm that the topology-protected surface metallic bands come from the BiBrO4 surface which means that one can build a transport device using Pb2BiBrO6 double perovskites with a PbO layer as an outmost protection layer. The mechanical stabilities such as bulk, shear, Young’s moduli, Poisson’s and Pugh’s ratio, longitudinal, transverse, and average sound velocity, together with Debye temperature are also studied. Our results show that these Pb2AA’O6 (A = Sb and Bi; A’ = Br and I) and Pb2SeTeO6 are mechanically stable.

1. Introduction

The discovery of topological insulators [1,2] stems from the studies on the quantum Hall effect [3,4] and the quantum spin Hall effects [5,6,7,8,9] over the past few decades, thus becoming a successful area of research in condensed matter physics. Topological insulators are insulators that have a specific bandgap in bulk form. Nonetheless, unlike ordinary insulators, TIs have metallic Dirac states on the surface [10,11,12,13,14,15]. The coexistence of the bulk insulating and surface conducting states leads to TIs with unusual electronic characteristics. For example, TIs are promising materials for spin-dependent applications [2]. So far, several topological materials, such as topological crystalline insulators [16], topological insulators, Dirac [17], and Weyl [18,19] semimetals have received particular attention and thus have attracted intensive research [1]. It is found that the metallic surface state protected by the time-reversal invariants can always be found in three-dimensional TIs. Furthermore, the metallic surface states of TIs allow only for a specific spin-momentum state, i.e., spin-momentum-locking transport [2]. Therefore, compared with the electron transport of ordinary metals, TIs have great potential for spintronic applications.
Double perovskites A2BB’O6 made of two single perovskites ABO3 and AB’O3 are potential materials for many applications and attract both experimental synthesis and theoretical predictions in the past few decades. For example, Sr2FeMoO6 [20] and Sr2FeOsO6 [21] double perovskites are candidates for spintronic devices for their half metallicity at room temperature. Moreover, Sr2CrOsO6 [22] is a ferrimagnetic insulator with a very high Curie temperature of 720 K. The ideal structure of the double perovskites is cubic, however, they might undergo a temperature-induced structural phase transition. For example, Pb2CoTeO6 [23,24] double perovskites are synthesized with monoclinic, rhombohedral, and cubic structures in different temperature ranges. Beyond the experimental preparations, a lot of theoretical predictions for the emerging double perovskites are made. For example, halfmetallic, topological and multiferroic double perovskites are often mentioned in theoretical predictions. We, therefore, believe that there is possible topological insulator in double perovskites.
Experimentally, Bi2Se3 [13,25], Bi1−xSbx [26] are shown to be topological insulators. Furthermore, it is theoretically predicted that CsPbI3 [27,28] and A2BiXO6 (A = Ca, Sr, Ba; X = I, Br) [29] are also possibly TIs. Typically, these materials are ordinary metals or insulators, but become insulators by including spin-orbit coupling (SOC) effect in the calculations. In other words, the topological behavior cannot be discovered without including SOC in theoretical calculations. The CsPbI3 perovskite is an insulator, it may become a topological insulator by applying an external axial strain. Large bandgap topological insulators are particularly of interest because they have a strong ability to overcome thermal fluctuation. Unlike 2D TIs, where the bandgap in these materials can be tuned in several ways, the bandgap of 3D TIs is hard to increase. Several ways to tune the bandgap of 3D TIs. The first approach is to find a material composed of heavy elements, such as Bi or Te, to provide a stronger SOC [30]. The second approach is to find specific crystal structures, such as perovskite and double perovskite. The last way is to apply external fields. More recently, Pi et al. proposes a new class of large bandgap of 0.55 eV topological insulators in the A2BiXO6 (A = Ca, Sr, Ba; X = I, Br) [30] double perovskites structures. Most recently, Lee et al. also predicts A2TePoO6 (A = Ca, Sr, Ba) [31] double perovskites as TIs which also have high bandgap as high as 0.4 eV. Typically, it can be achieved to theoretically predict a topological insulator by observing the band inversion with and without SOC in the first Brillouin zone in the theoretical calculations. In other words, the SOC introduces band inversion and bandgap in the conventional TIs. Pi et al. [30] reported a tight-binding model in the rock-salt structure, showing that if certain s- and p-orbital orderings are satisfied in the absence of SOC, the material can be a topological insulator. In addition, a useful and practical topological number Z2 was introduced by Fu and Kane [32], which is calculated by analyzing the bulk band structure.
In this study, we investigated the electronic band structure of Pb2AA’O6 (A = Sb and Bi; A’ = Br and I) and Pb2SeTeO6 under density functional theory. The crystal structures and computational methods are described in Section 2. In Section 3.1, we present the band structures of the double perovskites with and without SOC. We show that in the Pb2BiBrO6 and Pb2SeTeO6 double perovskites, there is a band contact at Γ point along with s- and p- band inversion. Mechanical properties and stability are also discussed in Section 3.2. In Section 3.3, we present the metallic surface band of the Pb2BiBrO6 double perovskites as an example. Finally, we draw conclusions in Section 4.

2. Structures and Computational Methods

The double perovskite Pb2AA’O6 is a body-centered tetragonal with a space group of I4/mmm. Plotted in Figure 1 is the primitive unit cell of the Pb2AA’O6 double perovskite. Listed in Table 1 are the lattice constants a, b, c, unit cell volume, atomic coordination O1z, O2x, and O2y. In the Pb2AA’O6 double perovskite, the two Pb atoms are located in (0.75, 0.25, 0.5) and (0.25, 0.75, 0.5), A in (0.0, 0.0, 0.0) and B in (0.5, 0.5, 0.0). The six oxygen atoms can be divided into two groups. The first group consists of two oxygen whose positions are (O2y, O2y, O1z), ( O2y, O2y, O1z) where O2y and O1z are shown in Table 1. The second group had four oxygen located at (O2x, O2x, 0), ( O2x, O2x, 0), ( O2y, O2y, 0), and (O2y, O2y, 0), see also Table 1.
In order to find an equilibrium crystal structure, we performed a structural optimization using the conventional cell where all atoms were free to move until the force acting on each atom was smaller than 0.002 eV/ . The structure optimization was done without considering SOC. After structural optimization, the space group of all considered double perovskites are still I4/mmm. All calculations use the plane-wave basis set as implemented in the Vienna ab-initio simulation package (VASP) [33,34]. The kinetic energy cutoff was chosen to be 520 eV and a 12 × 12 × 12 Monkhorst-Pack k mesh sampling was used for the electronic density of state integration with the Γ point is included. To include the electronic exchange-correlation functions, a generalized gradient approximation (GGA) with the Perdew-Burke-Ernzerhof (PBE) correction was used [35,36]. The self-consistent procedures is complete when the total energy differences is less than 10−6 eV. To calculate the surface band structure, we prepared a large supercell containing 12 layers of Pb2AA’O6 double perovskites, i.e., 6 formula units, with a vacuum of 20   at least. In this supercell, one PbO and one AA’O4 surface are in contact with the vacuum. We also prepare another two supercells that contain the same surface, PbO or AA’O4 surface, on both sides by cutting the specific layers to understand the contribution of the surface band structures.

3. Results and Discussion

3.1. Structural, and Electronic Band Structure

The calculated equilibrium lattice constants, a, b, c/a ratio, unit cell volume V0, atomic coordination O1z, O2x, O2y, and bandgap are listed in Table 1. It is obvious that the c/a ratio for the Pb2AsIO6, Pb2SbIO6, Pb2BiBrO6, Pb2BiIO6, and Pb2SeTeO6 is 1.413 which is very close to the ideal value of 2 . The c/a ratio of Pb2AsBrO6 and Pb2SbBrO6 were 1.282 and 1.286, respectively. We also found that Pb2AsIO6 has the smallest equilibrium volume whilst Pb2BiIO6 has the largest equilibrium volume. It is related to the difference in wigner-seitz radius of the As and Bi atom. The calculated bandgap is all zero without SOC, while it becomes nonzero in Pb2BiBrO6 and Pb2SeTeO6 double perovskites with SOC. The bandgap for the Pb2BiBrO6 and Pb2SeTeO6 double perovskites is indirect and the magnitude is 0.390 eV and 0.181 eV.
Displayed in Figure 2 is the electronic band structures of the Pb2AA’O6 double perovskites without, upper panel, and with, bottom panel, spin-orbit coupling. Let us take Pb2BiBrO6, see Figure 2e, as an example. Without SOC, the band structures of Pb2BiBrO6 at Γ point is contributed by the Bi-p and Br-p orbitals. The Bi-p and Br-p orbitals are separated into pz and py (px) groups. About 1eV at Γ point, the bands are mainly contributed from the Bi-s and Br-s orbital. It satisfies the first condition given by Pi et al. [30] that there is a s- and p-band inversion that occurs at the Γ point without SOC. When the SOC is taken into account, see Figure 2l, the p-orbital of the Bi and Br atom split to −0.6 eV and 0.55 eV with respect to the Fermi level. The orbital contribution at Γ point is still contributed from the p-orbital of the Bi and Br atom. Away from Γ along Γ -X direction, the band’s contribution transferred from p- to s-orbital At X point, the bands become mostly from the s-orbital of the Bi and Br atom. To make it clearer, we demonstrate the Bi (Se) and Br (Te), s- and p-orbital projected band structures in Figure 3. Therefore, we conclude that Pb2BiBrO6 and Pb2SeTeO6 are possible topological insulators. The SOC-induced bandgap for the Pb2BiBrO6 is 0.390 eV, being higher than most 3D TIs. We also found that the Z2 index [32] ( ν 0 ; ν 1   ν 2   ν 3 ) of Pb2BiBrO6and Pb2SeTeO6 are (1; 0 0 0) showing that they are strong topological insulators.
We also demonstrate the atom and orbital decomposed density of states in Figure 4. We focus on the Bi, Br, Se, and Te atoms’ s-, px-, py- and pz-orbitals. In Pb2BiBrO6 double perovskite, the density of states of Bi’s s-orbital is larger than Br’s s-orbital. In contrast, the density of states for Br’s p orbitals is larger than Bi’s p orbital. The peak for both Bi’s and Br’s s-orbital lies between −1 eV and −2 eV. It is quite different compared with the density of states of Se’s and Te’s s-orbital. The Te’s s-orbital is closer to the Fermi level than Se’s s-orbital. We also note that Br and Te’s px- and py-orbital completely degenerate between −6 eV to 2 eV.
To further confirm that Pb2BiBrO6 and Pb2SeTeO6 are possible topological insulators, we present in detail our calculations for Z2 invariants. We first calculate the bulk band structure using the maximally localized Wannier functions as implemented in the WANNIER90 package [37]. The obtained bulk band structures are compared with our DFT band results are shown in Figure 5a which are in excellent agreement. The wannier orbitals for Pb, Bi, Br, and O atoms are s, px, py and pz. With the wannier orbitals, a tight-binding model [38] is used for obtaining the Z2 invariants. The results are shown in Figure 5b–g. Figure 5b–g are wannier charge center as a function of momentum k for the k1 = 0.0, k1 = 0.5, k2 = 0.0, k2 = 0.5, k3 = 0.0, and k3 = 0.5 momentum plane, respectively. In practice, the Z2 number can be identified by counting the number of times for an arbitary reference lines parallel to k that cross the evolution lines. [39] The results are 1, 0, 1, 0, 1, and 0 for Figure 5b,c,d,e,f,g, respectively. Another way to determine the Z2 trivial or nontrival can be done by counting the number of crossings between the largest gap and the wannier charge center. [40] Although one can use the obtained wannier functions combined with the tight-binding hamiltonian to explore the surface band structures. We calculate the surface band structures using a large supercell that contains 12 layers and the results are shown in the Section 3.3.

3.2. Mechanical Properties

Listed in Table 2 is the calculated elastic constants and their related properties calculated from these elastic constants. In the tetragonal structure, there are six nonzero elastic constants C11, C12, C13, C33, C44, and C66. The elastic constant matrix can be written as:
[ C 11 C 12 C 13 0 0 0 C 12 C 11 C 13 0 0 0 C 13 C 13 C 33 0 0 0 0 0 0 C 44 0 0 0 0 0 0 C 44 0 0 0 0 0 0 C 66 ]
Our calculated non-zero elastic constants C i j are all positive. Therefore, the mechanical stabilities [41] criteria of the Pb2AA’O6 double perovskites can be simplified as C 11 > C 12 , ( C 11 + C 33 2 C 13 ) > 0 , and C 33 ( C 11 + C 12 ) > 2 C 13 2 . The Pb2AA’O6 double perovskites are mechanically stable if all criteria are met.
We further calculate the bulk modulus B and shear modulus G from Voigt-Reuss-Hill approximation [42]:
M = ( M R + M V ) 2 ,   M = B ,   G
where BR (BV) is the bulk modulus of the Reuss (Voigt) bound. Typically, the Reuss bound is obtained from a uniform stress assumption and is the lower limit of the actual modulus. In contrast, the Voigt is the upper bound on the actual modulus. In the tetragonal phase, the bulk modulus and shear modulus can be represented as:
B V = 2 ( C 11 + C 12 ) + C 33 + 4 C 13 9
B R = ( C 11 + C 12 ) C 33 2 C 13 2 C 11 + C 12 + 2 C 33 4 C 13
G V = 2 C 11 C 12 + C 33 2 C 13 + 6 C 44 + 3 C 66 15
15 G R = 18 B V ( C 11 + C 12 ) C 33 C 13 2 + 6 C 11 C 12 + 6 C 44 + 3 C 66  
In terms of the Voigt-Reuss-Hill approximations, the Young’s modulus E and Poisson’s ratio ν can be calculated from the formulas:
E = 9 B G 3 B + G
ν = 3 B 2 G 6 B + 2 G
It is well known that Zener introduces an anisotropy factor of a crystal as A = 2 C 44 / ( C 11 C 12 ) . In Zener’s definition, the anisotropy factor is determined from the C 44 and ( C 11 C 12 ) . The elastic constant C 44 represents the deformation resistance of a crystal against the shear stress applied across the (100) plane in the [010] direction. Therefore, Zener’s definition is limited to cubic system. For a locally isotropy crystal, A = 1. As suggested by Ranganathan et al. [43], we calculate the universal anisotropy index A U by:
A U = 5 G V G R + B V B R 6
Note that A U = 0 is for a locally isotropy single crystal.
The B/G ratio, also known as the Pugh’s ratio [44], describes the ductility or brittleness of the crystal. In the 1950s, Pugh analyzed his experimental data and found that a higher Pugh’s ratio indicated the ductility of the material. A cutoff value of 1.75 is generally recommended for the Pugh’s ratio.
The Debye temperature is the key quantity in the quasiharmonic Debye model. It leads to an estimate of many physical properties, such as specific heat, elastic constants, thermal conductivity, and melting temperature. It also sets the scale for electron-phonon interaction in superconductors. We calculate the Debye temperature using the formula
Θ D = h k B 3 n N A ρ 4 π M 3 v m
where ρ is the density, M the molecular mass, N A Avogardo constant, and v m the average sound velocity. The average sound velocity can be calculated from the Navier’s equation
v l = 3 B + 4 G 3 ρ ,   v t = G ρ
and
v m = 1 1 3 ( 1 v l 3 + 2 v t 3 ) 3
We also calculate the melting temperature T m , using an empirical expression T m ( K ) = 354 + 4.50 ( 2 C 11 + C 33 ) / 3 ± 300   K . The calculated melting and Debye temperature, along with density and sound velocities v l , v t , and v m are listed in Table 3. We also calculated the phonon dispersion of the Pb2BiBrO6 double perovskite. The results show that Pb2BiBrO6 double perovskite is unstable.

3.3. Band Structure of the Supercell

To further confirm that Pb2BiBrO6 and Pb2SeTeO6 are topological insulators, Figure 6 shows the electronic band structures of the Pb2BiBrO6 and Pb2SeTeO6 supercell. We constructed a supercell containing 12 layers of Pb2BiBrO6 or Pb2SeTeO6 (6 formula units) with a vacuum of 20   . The calculations were done without structure relaxation, including surface atomic reconstruction. There are two kinds of surface layers in our Pb2BiBrO6 or Pb2SeTeO6 supercell, one is the PbO layer and the other is the BiBrO4 (SeTeO4) layer. We denote these two surface layers as top PbO and top BiBrO4 (SeTeO4). We also denote the second nearest BiBrO4 (SeTeO4) layer to the surface as top2 BiBrO4 and top2 SeTeO4. The calculated electronic band structure of the Pb2BiBrO6 and Pb2SeTeO6 supercell are shown in Figure 6a,e. Clearly, we observe metallic bands between Γ -X and M- Γ . It theoretically confirms that Pb2BiBrO6 and Pb2SeTeO6 are topological insulators. It is also important to verify the origin of these metallic bands. To investigate, we illustrate the project band structures in Figure 5b–d,f–h. In Figure 6b,f, the red solid circles represent the energy band due to top PbO layer. Very interestingly, the top PbO layer gives no contributions to the metallic surface bands in Pb2BiBrO6. We found that the surface BiBrO4 layer, Figure 6c, and nearest surface BiBrO4 layers, Figure 6d, give contributions to the metallic surface bands. Unlike Pb2BiBrO6, both PbO and SeTeO4 surface give contribution to the metallic bands. The surface energy can be calculated from the equation
γ = E s l a b N E b u l k 2 A
where E s l a b is the total energy of the supercell structure, N is the number of bulk Pb2BiBrO6 in the supercell, and E b u l k is the bulk total energy. Our calculated surface energy for Pb2BiBrO6 is 0.56 J/m2. In Pb2BiBrO6, although the PbO layer gives no contribution to the surface conduction bands, the surface PbO layer is still useful because the surface PbO layer can act as a protective layer when building the actual devices. It can prevent the topological protected surface metallic bands damaged from the experimental defects, such as gas and atom adsorption, surface disorders, and dangling bonds.

4. Conclusions

We found a new class of three-dimensional (3D) topological insulators (TIs) in Pb2BiBrO6 and Pb2SeTeO6 double perovskites by first-principles theoretical calculation. Our first-principles theoretical calculations show that Pb2BiBrO6 and Pb2SeTeO6 are Z2 nontrivial and their bandgaps are high at 0.390 eV and 0.181 eV, respectively. The topology comes from the band contact and band inversion at Γ point in the absence of spin-orbit interactions. This results in a larger bandgap for this new class of topological insulators than conventional TI. We also use a large supercell to calculate the surface metallic bands and we confirm that the topology-protected surface metallic bands come from the BiBrO4 or SeTeO4 surface. It means that one can build a transport device using Pb2BiBrO6 or Pb2SeTeO6 double perovskites with a PbO layer as the outmost surface protection layer. The mechanical stabilities such as bulk, shear, Young’s moduli, Poisson’s and Pugh’s ratio, longitudinal, transverse, and average sound velocity, together with Debye and melting temperatures are also studied.

Author Contributions

Conceptualization, J.-C.T. and P.-L.L.; methodology; validation, C.-H.L.; formal analysis, J.-C.T., C.-H.L. and P.-L.L.; investigation, C.-H.L.; writing—original draft preparation, J.-C.T. and P.-L.L.; writing—review and editing, J.-C.T. and P.-L.L.; supervision, Y.-K.W. All authors have read and agreed to the published version of the manuscript.

Funding

This research was funded by the Ministry of Science and Technology (MOST), Taiwan, grant numbers 110-2218-E-A49-020-MBK, 109-2224-E-003-00, 107-2112-M-039-002-MY2.

Acknowledgments

Computational studies were performed using the resources of the National Center for High Performance Computing, Taiwan, and the computing resources of the Institute of Atomic and Molecular Sciences, Academia Sinica, IAMS.

Conflicts of Interest

The authors declare no conflict of interest.

References

  1. Ando, Y. Topological insulator materials. J. Phys. Soc. Jpn. 2013, 82, 102001. [Google Scholar] [CrossRef] [Green Version]
  2. Hasan, M.Z.; Kane, C.L. Colloquium: Topological insulators. Rev. Mod. Phys. 2010, 82, 3045. [Google Scholar] [CrossRef] [Green Version]
  3. Von Klitzing, K.; Dorda, G.; Pepper, M. New method for high-accuracy determination of the fine-structure constant based on quantized hall resistance. Phys. Rev. Lett. 1980, 45, 494. [Google Scholar] [CrossRef] [Green Version]
  4. Haldane, F.D.M. Model for a quantum hall effect without landau levels: Condensed-matter realization of the “parity anomaly”. Phys. Rev. Lett. 1988, 61, 2015. [Google Scholar] [CrossRef] [PubMed]
  5. Kane, C.L.; Mele, E.J. Quantum spin hall effect in graphene. Phys. Rev. Lett. 2005, 95, 226801. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  6. Bernevig, B.A.; Zhang, S.-C. Quantum spin hall effect. Phys. Rev. Lett. 2006, 96, 106802. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  7. Bernevig, B.A.; Hughes, T.L.; Zhang, S.-C. Quantum spin hall effect and topological phase transition in HgTe quantum wells. Science 2006, 314, 1757. [Google Scholar] [CrossRef] [Green Version]
  8. Oka, T.; Aoki, H. Photovoltaic hall effect in graphene. Phys. Rev. B 2009, 79, 081406. [Google Scholar] [CrossRef] [Green Version]
  9. Linder, N.H.; Refael, G.; Galitski, V. Floquet topological insulator in semiconductor quantum wells. Nat. Phys. 2011, 7, 490. [Google Scholar] [CrossRef] [Green Version]
  10. Shvets, I.A.; Klimovskikh, I.I.; Aliev, Z.S.; Babanly, M.B.; Zuniga, F.J.; Sanchez-Barriga, J.; Krivenkov, M.; Shikin, A.M.; Chulkov, E.V. Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3. Phys. Rev. B 2019, 100, 195125. [Google Scholar] [CrossRef] [Green Version]
  11. Zhang, F.; Kane, C.L.; Mele, E.J. Surface states of topological insulators. Phys. Rev. B 2012, 86, 081303. [Google Scholar] [CrossRef] [Green Version]
  12. Zhang, H.J.; Liu, C.-X.; Qi, X.-L.; Dai, X.; Fang, Z.; Zhang, S.-C. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nat. Phys. 2009, 5, 438. [Google Scholar] [CrossRef]
  13. Xia, Y.; Hsieh, D.; Wray, L.; Pal, A.; Lin, H.; Bansil, A.; Grauer, D.; Hor, Y.S.; Cava, R.J.; Hasan, M.Z. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface. Nat. Phys. 2009, 5, 398. [Google Scholar] [CrossRef] [Green Version]
  14. Hsieh, D.; Xia, Y.; Qian, D.; Wray, L.; Meier, F.; Dil, J.H.; Osterwalder, J.; Patthey, L.; Fedorov, A.V.; Bansil, A.; et al. Observation of time-reversal-protected single-dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3. Phys. Rev. Lett. 2009, 103, 146401. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  15. Kuroda, K.; Arita, M.; Miyamoto, K.; Ye, M.; Jiang, J.; Kimura, A.; Krasovskii, E.E.; Chulkov, E.V.; Iwasawa, H.; Okuda, T.; et al. Hexagonally deformed fermi surface of the 3D topological insulator Bi2Se3. Phys. Rev. Lett. 2010, 105, 076802. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  16. Fu, L. Topological crystalline insulators. Phys. Rev. Lett. 2011, 106, 106802. [Google Scholar] [CrossRef] [Green Version]
  17. Wang, Z.; Weng, H.; Wu, Q.; Dai, X.; Fang, Z. Three-dimensional Dirac semimetal and quantum transport in Cd3As2. Phys. Rev. B 2013, 88, 125427. [Google Scholar] [CrossRef] [Green Version]
  18. Wan, X.; Turner, A.M.; Vishwanath, A.; Savrasov, S.Y. Topological semimetal and Fermi-arc surface states in the electronic structure of pyrochlore iridates. Phys. Rev. B 2011, 83, 205101. [Google Scholar] [CrossRef] [Green Version]
  19. Xu, S.Y.; Belopolski, I.; Alidoust, N.; Neupane, M.; Bian, G.; Zhang, C.; Sankar, R.; Chang, G.; Yuan, Z.; Lee, C.-C.; et al. Discovery of a Weyl fermion semimetal and topological Fermi arcs. Science 2015, 349, 613. [Google Scholar] [CrossRef] [Green Version]
  20. Kobayashi, K.I.; Kimura, T.; Sawada, H.; Terakura, K.; Tokura, Y. Room-temperature magnetoresistance in an oxide material with an ordered double-perovskite structure. Nature 1998, 395, 677. [Google Scholar] [CrossRef]
  21. Paul, A.K.; Jansen, M.; Yan, B.; Felser, C.; Reehuis, M.; Abdala, P.M. Synthesis, crystal structure, and physical properties of Sr2FeOsO6. Inorg. Chem. 2013, 52, 6713. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  22. Samanta, K.; Sanyal, P.; Saha-Dasgupta, T. Half-metallic behavior in doped Sr2CrOsO6 double perovskite with high transition temperature. Sci. Rep. 2015, 5, 15010. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  23. Ivanov, S.A.; Nordblad, P.; Mathieu, R.; Tellgren, R.; Ritter, C. Structural and magnetic properties of the ordered perovskite Pb2CoTeO6. Dalton Trans. 2010, 39, 11136. [Google Scholar] [CrossRef] [Green Version]
  24. Liu, L.; Ivanov, S.; Mathieu, R.; Weil, M.; Li, X.; Lazor, P. Pressure tuning of octahedral tilt in the ordered double perovskite Pb2CoTeO6. J. Alloys Compd. 2019, 801, 310. [Google Scholar] [CrossRef]
  25. Dai, J.; West, D.; Wang, X.; Wang, Y.; Kwok, D.; Cheong, S.-W.; Zhang, S.B.; Wu, W. Toward the intrinsic limit of the topological insulator Bi2Se3. Phys. Rev. Lett. 2016, 117, 106401. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  26. Hsieh, D.; Qian, D.; Wray, L.; Xia, Y.; Hor, Y.S.; Cava, R.J.; Hasan, M.Z. A topological Dirac insulator in a quantum spin hall phase. Nature 2008, 452, 970. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  27. Liu, S.; Kim, Y.; Tan, L.-Z.; Rappe, A.-M. Strain-induced ferroelectric topological insulator. Nano Lett. 2016, 16, 1663. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  28. Tung, J.-C.; Hsieh, Y.-H.; Liu, P.-L. Strain induced topological insulator phase in CsPbBrxI3−x (x = 0, 1, 2, and 3) Perovskite: A theoretical study. Appl. Sci. 2021, 11, 5353. [Google Scholar] [CrossRef]
  29. Felser, C.; Qi, X.-L. Topological insulators. MRS Bull. 2014, 39, 843. [Google Scholar] [CrossRef] [Green Version]
  30. Pi, S.-T.; Wang, H.; Kim, J.; Wu, R.; Wang, Y.-K.; Lu, C.-K. New class of 3D topological insulator in double perovskite. J. Phys. Chem. Lett. 2017, 8, 332. [Google Scholar] [CrossRef] [Green Version]
  31. Lee, P.-H.; Zhou, J.; Pi, S.-T.; Wang, Y.-K. Topological insulators double perovskites: A2TePoO6 (A = Ca, Sr, Ba). J. Appl. Phys. 2017, 122, 224902. [Google Scholar] [CrossRef]
  32. Fu, L.; Kane, C.-L. Topological insulators in three dimensions. Phys. Rev. Lett. 2007, 98, 106803. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  33. Kresse, G.; Hafner, J. Ab initio molecular dynamics for open-shell transition metals. Phys. Rev. B 1993, 48, 13115. [Google Scholar] [CrossRef] [PubMed]
  34. Kresse, G.; Furthmüllerr, J. Ultrasoft pseudopotentials applied to magnetic Fe, Co, and Ni: From atoms to solids. Comput. Mater. Sci. 1996, 6, 15. [Google Scholar] [CrossRef]
  35. Wang, Y.; Perdew, J.-P. Correlation hole of the spin-polarized electron gas, with exact small-wave-vector and high-density scaling. Phys. Rev. B 1991, 44, 13298. [Google Scholar] [CrossRef] [PubMed]
  36. Wang, Y.; Perdew, J.-P. Erratum: Accurate and simple analytic representation of the electron-gas correlation energy. Phys. Rev. B 1992, 45, 13244. [Google Scholar]
  37. Mostofi, A.A.; Yates, J.R.; Pizzi, G.; Lee, Y.S.; Souza, I.; Vanderbilt, D.; Marzari, N. An updated version of wannier90: A tool for obtaining maximally-localised wannier functions. Comput. Phys. Commun. 2014, 185, 2309. [Google Scholar] [CrossRef] [Green Version]
  38. Wu, Q.S.; Zhang, S.N.; Song, H.-F.; Troyer, M.; Soluyanov, A.A. WannierTools: An open-source software package for novel topological materials. Comput. Phys. Commun. 2018, 224, 405. [Google Scholar] [CrossRef] [Green Version]
  39. Weng, H.; Dai, X.; Fang, Z. Exploration and prediction of topological electronic materials based on first-principles calculations. MRS Bull. 2014, 39, 849. [Google Scholar] [CrossRef] [Green Version]
  40. Gresch, D.; Autes, G.; Yazyev, O.V.; Troyer, M.; Vanderbilt, D.; Bernevig, B.A.; Soluyanov, A.A. Z2Pack: Numerical implementation of hybrid Wannier centers for identifying topological materials. Phys. Rev. B 2017, 95, 075146. [Google Scholar] [CrossRef] [Green Version]
  41. Wu, Z.-J.; Zhao, E.-J.; Xiang, H.-P.; Hao, X.-J.; Meng, J. Crystal structures and elastic properties of superhard IrN2 and IrN3 from first principles. Phys. Rev. B 2007, 76, 054115. [Google Scholar] [CrossRef]
  42. Hill, R. The elastic behaviour of a crystalline aggregate. Proc. Phys. Soc. Sect. A 1952, 65, 349. [Google Scholar] [CrossRef]
  43. Ranganathan, S.I.; Ostoja-Starzewski, M. Universal elastic anisotropy index. Phys. Rev. Lett. 2008, 101, 055504. [Google Scholar] [CrossRef] [PubMed] [Green Version]
  44. Pugh, S.F. XCII relations between the elastic moduli and the plastic properties of polycrystalline pure metals. Lond. Edinb. Dublin Philos. Mag. J. Sci. 1954, 7, 823–843. [Google Scholar] [CrossRef]
Figure 1. (a) Primitive and (b) conventional crystal structure of the Pb2AA’O6 (A = Sb and Bi; A’ = Br and I) and Pb2SeTeO6 double perovskites.
Figure 1. (a) Primitive and (b) conventional crystal structure of the Pb2AA’O6 (A = Sb and Bi; A’ = Br and I) and Pb2SeTeO6 double perovskites.
Applsci 12 05913 g001
Figure 2. Scalar relativistic, upper panel (ag), and fully relativistic, bottom panel (hn), electronic band structures of the Pb2AA’O6 (A = Sb and Bi; A’ = Br and I) and Pb2SeTeO6 double perovskites. The Fermi energy is set to be zero. The orange colors in (l,n) represents the bandgaps.
Figure 2. Scalar relativistic, upper panel (ag), and fully relativistic, bottom panel (hn), electronic band structures of the Pb2AA’O6 (A = Sb and Bi; A’ = Br and I) and Pb2SeTeO6 double perovskites. The Fermi energy is set to be zero. The orange colors in (l,n) represents the bandgaps.
Applsci 12 05913 g002
Figure 3. Scalar relativistic, (a,b), and fully relativistic, (c,d), electronic band structures of the Pb2BiBrO6 and Pb2SeTeO6 double perovskites projected onto the s-(red) and p-(blue) orbitals. Note that only BiBr (SeTe) s- and p-orbitals are projected. The Fermi energy is shifted to zero as a reference.
Figure 3. Scalar relativistic, (a,b), and fully relativistic, (c,d), electronic band structures of the Pb2BiBrO6 and Pb2SeTeO6 double perovskites projected onto the s-(red) and p-(blue) orbitals. Note that only BiBr (SeTe) s- and p-orbitals are projected. The Fermi energy is shifted to zero as a reference.
Applsci 12 05913 g003
Figure 4. Scalar relativistic, (a,b), and fully relativistic, (c,d), atom and orbital decomposed densities of states of the Pb2BiBrO6 and Pb2SeTeO6 double perovskites. projected onto the s-(red) and px-(blue), py-(green) and pz-(orange) orbitals. Note that only BiBr(SeTe) s- and p-orbitals are projected. The Fermi energy is shifted to zero as a reference.
Figure 4. Scalar relativistic, (a,b), and fully relativistic, (c,d), atom and orbital decomposed densities of states of the Pb2BiBrO6 and Pb2SeTeO6 double perovskites. projected onto the s-(red) and px-(blue), py-(green) and pz-(orange) orbitals. Note that only BiBr(SeTe) s- and p-orbitals are projected. The Fermi energy is shifted to zero as a reference.
Applsci 12 05913 g004
Figure 5. (a) Band structures and (bg) Wilson loop for the six time-reversal invariant momentum plane for the Pb2BiBrO6 double perovskites.
Figure 5. (a) Band structures and (bg) Wilson loop for the six time-reversal invariant momentum plane for the Pb2BiBrO6 double perovskites.
Applsci 12 05913 g005
Figure 6. Surface electronic band structure of the Pb2BiBrO6 and Pb2SeTeO6 supercell, (a,e) total band structures, (bd) project band structures of the top PbO, BiBrO4 and top2 BiBrO4 layer, (fh) project band structures of the top PbO, SeTeO4 and top2 SeTeO4 layer, respectively. Note that only the Pb, Bi/Se, and Br/Te atoms’ orbitals are projected. The Fermi energy is set to be zero as a reference.
Figure 6. Surface electronic band structure of the Pb2BiBrO6 and Pb2SeTeO6 supercell, (a,e) total band structures, (bd) project band structures of the top PbO, BiBrO4 and top2 BiBrO4 layer, (fh) project band structures of the top PbO, SeTeO4 and top2 SeTeO4 layer, respectively. Note that only the Pb, Bi/Se, and Br/Te atoms’ orbitals are projected. The Fermi energy is set to be zero as a reference.
Applsci 12 05913 g006
Table 1. Structural parameters of the fully optimized Pb2AA’O6 structures where Pb (x, y, z) = (0.75, 0.25, 0.5), or (0.25, 0.75, 0.5), A (x, y, z) = (0, 0, 0), A’ (x, y, z) = (0.5, 0.5, 0), O1 (x, y, z) = (O2y, O2y, O1z), ( O2y, O2y, O1z) and O2 (x, y, z) = (O2x, O2x, 0), ( O2x, O2x, 0), ( O2y, O2y, 0), and (O2y, O2y, 0). The calculated lattice constant a (in ), c/a ratio, the volume of the primitive cell V0 ( 3 / f . u . ) and bandgap (in eV). The bandgap in the brackets is the SOC results.
Table 1. Structural parameters of the fully optimized Pb2AA’O6 structures where Pb (x, y, z) = (0.75, 0.25, 0.5), or (0.25, 0.75, 0.5), A (x, y, z) = (0, 0, 0), A’ (x, y, z) = (0.5, 0.5, 0), O1 (x, y, z) = (O2y, O2y, O1z), ( O2y, O2y, O1z) and O2 (x, y, z) = (O2x, O2x, 0), ( O2x, O2x, 0), ( O2y, O2y, 0), and (O2y, O2y, 0). The calculated lattice constant a (in ), c/a ratio, the volume of the primitive cell V0 ( 3 / f . u . ) and bandgap (in eV). The bandgap in the brackets is the SOC results.
a = b
( )
c/aV0
( 3 / f . u . )
O1zO2xO2yBandgap
(eV)
Pb2AsBrO66.0031.282138.690.43710.25290.21850 (0)
Pb2AsIO65.9051.413145.500.49420.24730.24710 (0)
Pb2SbBrO66.1511.286149.610.45990.25860.22990 (0)
Pb2SbIO66.0591.413157.150.49810.25120.25100 (0)
Pb2BiBrO66.0111.413153.480.47150.26440.26420 (0.390)
Pb2BiIO66.1651.413165.630.47750.26120.26120 (0)
Pb2SeTeO65.8941.413144.700.49040.24510.24520 (0.181)
Table 2. Calculated single crystal elastic modulus C11, C12, C13, C44, C66, bulk modulus B, shear modulus G, Young’s modulus E, Poisson’s ratio ν , universal anisotropy index A U and Pugh’s B/G ratio of the Pb2AA’O6 double perovskites.
Table 2. Calculated single crystal elastic modulus C11, C12, C13, C44, C66, bulk modulus B, shear modulus G, Young’s modulus E, Poisson’s ratio ν , universal anisotropy index A U and Pugh’s B/G ratio of the Pb2AA’O6 double perovskites.
Pb2AA’O6
AA’ = AsBrAsISbBrSbIBiBrBiISeTe
C11 (GPa)185.28188.62176.62160.63180.21166.60199.12
C12 (GPa)90.70106.72101.72105.93103.57112.36109.61
C13 (GPa)71.7597.3362.3985.1473.4465.1896.05
C33 (GPa)236.41199.08254.26186.08211.17214.27214.78
C44 (GPa)45.5648.7444.3947.4367.9874.3156.89
C66 (GPa)47.1141.3936.5327.5038.1726.9844.81
BR (GPa)118.99131.01117.23117.74119.16114.77135.15
BV (GPa)119.48131.01117.83117.75119.16114.77135.16
B (GPa)119.24131.01117.53117.74119.16114.77135.16
GR (GPa)50.7144.2643.4032.2246.4036.2649.26
GV (GPa)52.8144.6348.8935.8950.2745.9750.06
G (GPa)51.7644.4546.1534.5648.3441.1249.66
E (GPa)135.65119.79122.4294.43127.73110.19132.72
ν 0.310.350.330.370.320.340.34
A U 0.210.040.640.400.421.340.08
B/G2.302.952.543.412.472.792.72
Table 3. Density ρ ( g / cm 3 ) , longitudinal v l , transverse v t , average v m , sound velocity (m/s), Debye temperature Θ D ( K ) and melting temperature T m ( K ) of the Pb2AA’O6 double perovskites.
Table 3. Density ρ ( g / cm 3 ) , longitudinal v l , transverse v t , average v m , sound velocity (m/s), Debye temperature Θ D ( K ) and melting temperature T m ( K ) of the Pb2AA’O6 double perovskites.
Pb2AA’O6
AA’ = AsBrAsISbBrSbIBiBrBiISeTe
ρ   ( g / c m 3 ) 7.968.137.948.028.658.488.23
v l   ( m / s ) 4861.574838.294759.844519.424607.824470.864947.25
v t   ( m / s ) 2549.192338.392416.372075.702364.182201.392456.78
v m   ( m / s ) 2851.172628.242708.242338.912647.992471.742757.15
Θ D   ( K ) 353321327278317289337
T m   ( ± 300   K ) 126493512651115121111751273
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Tung, J.-C.; Lee, C.-H.; Liu, P.-L.; Wang, Y.-K. Electronic Band Structures of the Possible Topological Insulator Pb2BiBrO6 and Pb2SeTeO6 Double Perovskite: An Ab Initio Study. Appl. Sci. 2022, 12, 5913. https://doi.org/10.3390/app12125913

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Tung J-C, Lee C-H, Liu P-L, Wang Y-K. Electronic Band Structures of the Possible Topological Insulator Pb2BiBrO6 and Pb2SeTeO6 Double Perovskite: An Ab Initio Study. Applied Sciences. 2022; 12(12):5913. https://doi.org/10.3390/app12125913

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Tung, Jen-Chuan, Chi-Hsuan Lee, Po-Liang Liu, and Yin-Kuo Wang. 2022. "Electronic Band Structures of the Possible Topological Insulator Pb2BiBrO6 and Pb2SeTeO6 Double Perovskite: An Ab Initio Study" Applied Sciences 12, no. 12: 5913. https://doi.org/10.3390/app12125913

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