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Journal: Appl. Sci., 2021
Volume: 11
Number: 4393
Article:
Influence of Hydrogen Ions on the Performance of Thin-Film Transistors with Solution-Processed AlOx Gate Dielectrics
Authors:
by
Yongbo Wu, Linfeng Lan, Penghui He, Yilong Lin, Caihao Deng, Siting Chen and Junbiao Peng
Link:
https://www.mdpi.com/2076-3417/11/10/4393
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