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Journal: Appl. Sci., 2020
Volume: 10
Number: 2979
2979
Article: Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET
Authors: by Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi and Jae Woo Lee
Link: https://www.mdpi.com/2076-3417/10/8/2979

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